公开(公告)号：US12028035B2

公开(公告)日：2024-07-02

申请号：US17237611

申请日：2021-04-22

Applicant: Huawei Technologies Co., Ltd.

Inventor： Zhengyu He ,  Huilong Xu

IPC: H03H3/02 ,  H03H9/205

CPC classification number: H03H3/02 ,  H03H9/205

Abstract: This application provides a monolithic integrated BAW resonator production method, including: preparing an imprint template; forming a mask material layer on a substrate; pressing the mask material layer by using the imprint template in a direction of the substrate, to form a mask groove; performing plasma etching on the substrate by using the mask material layer, as a mask, that is used to form the mask groove, to form, on the substrate, grooves that one-to-one correspond to positions of several mask grooves; and forming, in the several grooves, bottom electrode layers, piezoelectric layers, and top electrode layers that are sequentially stacked, to form resonators of different frequencies.

公开(公告)号：US20210242848A1

公开(公告)日：2021-08-05

申请号：US17237611

申请日：2021-04-22

Applicant: Huawei Technologies Co., Ltd.

Inventor： Zhengyu He ,  Huilong Xu

IPC: H03H3/02 ,  H03H9/205

Abstract: This application provides a monolithic integrated BAW resonator production method, including: preparing an imprint template; forming a mask material layer on a substrate; pressing the mask material layer by using the imprint template in a direction of the substrate, to form a mask groove; performing plasma etching on the substrate by using the mask material layer, as a mask, that is used to form the mask groove, to form, on the substrate, grooves that one-to-one correspond to positions of several mask grooves; and forming, in the several grooves, bottom electrode layers, piezoelectric layers, and top electrode layers that are sequentially stacked, to form resonators of different frequencies.