公开(公告)号：US10600917B2

公开(公告)日：2020-03-24

申请号：US16119415

申请日：2018-08-31

Applicant: Huawei Technologies Co., Ltd.

Inventor： Xudong Qin ,  Huilong Xu ,  Chen-Xiong Zhang

IPC: H01L29/786 ,  H01L29/423 ,  H01L29/24 ,  H01L29/66 ,  H01L29/778 ,  H01L29/16 ,  H01L29/10 ,  H01L29/417 ,  H01L29/78

Abstract: A field effect transistor and a manufacturing method thereof are provided. The field effect transistor includes two top gate structures (1031C and 1031D) and two bottom gate structures (1032A and 1032B). The top gate structures (1031C and 1031D) and the bottom gate structures (1032A and 1032B) are opposite to each other in pair. This increases a quantity of control-voltage-induced carriers in the field effect transistor, and therefore increases an output current of the field effect transistor, improves a power gain limit frequency in high-frequency use, and makes an electric field between the top gate structures (1031C and 1031D) and the bottom gate structures (1032A and 1032B) more adequately cover a channel layer (106) between source structures (1041 and 1042) and a drain (105), thereby reducing a parasitic effect in a high frequency, and further improving a frequency characteristic of the field effect transistor.

公开(公告)号：US12028035B2

公开(公告)日：2024-07-02

申请号：US17237611

申请日：2021-04-22

Applicant: Huawei Technologies Co., Ltd.

Inventor： Zhengyu He ,  Huilong Xu

IPC: H03H3/02 ,  H03H9/205

CPC classification number: H03H3/02 ,  H03H9/205

Abstract: This application provides a monolithic integrated BAW resonator production method, including: preparing an imprint template; forming a mask material layer on a substrate; pressing the mask material layer by using the imprint template in a direction of the substrate, to form a mask groove; performing plasma etching on the substrate by using the mask material layer, as a mask, that is used to form the mask groove, to form, on the substrate, grooves that one-to-one correspond to positions of several mask grooves; and forming, in the several grooves, bottom electrode layers, piezoelectric layers, and top electrode layers that are sequentially stacked, to form resonators of different frequencies.

公开(公告)号：US20210242848A1

公开(公告)日：2021-08-05

申请号：US17237611

申请日：2021-04-22

Applicant: Huawei Technologies Co., Ltd.

Inventor： Zhengyu He ,  Huilong Xu

IPC: H03H3/02 ,  H03H9/205

Abstract: This application provides a monolithic integrated BAW resonator production method, including: preparing an imprint template; forming a mask material layer on a substrate; pressing the mask material layer by using the imprint template in a direction of the substrate, to form a mask groove; performing plasma etching on the substrate by using the mask material layer, as a mask, that is used to form the mask groove, to form, on the substrate, grooves that one-to-one correspond to positions of several mask grooves; and forming, in the several grooves, bottom electrode layers, piezoelectric layers, and top electrode layers that are sequentially stacked, to form resonators of different frequencies.