公开(公告)号：US11238928B2

公开(公告)日：2022-02-01

申请号：US17049024

申请日：2019-11-12

Applicant: Huazhong University of Science and Technology

Inventor： Xingsheng Wang ,  Enming Huang ,  Xiangshui Miao

IPC: G11C11/00 ,  G11C13/00 ,  G11C7/06

Abstract: A read-write circuit mainly includes a read circuit and a write circuit. The write circuit comprises: a first voltage selector and a first voltage follower circuit that is electrically connected to the memristor storage array. The read-write circuit further includes a second voltage selector and a second voltage follower circuit that is electrically connected to the memristor storage array. Voltage stable following during bipolar writing is selected through the foregoing selector. Meanwhile, the reading circuit is provided with a variable resistor to select an access mode. The actual read-out voltage and the output voltage passing through the reference resistor under the same read voltage are input into a differential amplifier to obtain read-out data.