公开(公告)号：US08778602B2

公开(公告)日：2014-07-15

申请号：US12562248

申请日：2009-09-18

申请人： Hung-Ting Pan ,  Jing-Huan Chen ,  Wei-Chung Ma ,  Hsin-Chun Chiang ,  Po-Chung Cheng ,  Szu-An Wu

发明人： Hung-Ting Pan ,  Jing-Huan Chen ,  Wei-Chung Ma ,  Hsin-Chun Chiang ,  Po-Chung Cheng ,  Szu-An Wu

IPC分类号： G03F7/30

CPC分类号： G03F7/30 ,  G03F7/38 ,  H01L21/0273

摘要： A method of lithography patterning includes coating a resist layer on a substrate; performing an exposing process to the resist layer using a lithography tool with a numerical aperture tuned between about 0.5 and about 0.6; baking the resist layer; thereafter performing a first developing process to the resist layer for a first period of time; and performing a second developing process to the resist layer for a second period of time.

摘要翻译： 光刻图案的方法包括在基板上涂覆抗蚀剂层; 使用数值孔径调节在约0.5和约0.6之间的光刻工具对抗蚀剂层进行曝光处理; 烘烤抗蚀剂层; 然后对所述抗蚀剂层进行第一显影处理第一时间; 以及对所述抗蚀剂层进行第二显影处理第二时间段。

公开(公告)号：US20110070546A1

公开(公告)日：2011-03-24

申请号：US12562248

申请日：2009-09-18

申请人： Hung-Ting Pan ,  Jing-Huan Chen ,  Wei-Chung Ma ,  Hsin-Chun Chiang ,  Po-Chung Cheng ,  Szu-An Wu

发明人： Hung-Ting Pan ,  Jing-Huan Chen ,  Wei-Chung Ma ,  Hsin-Chun Chiang ,  Po-Chung Cheng ,  Szu-An Wu

IPC分类号： G03F7/20

CPC分类号： G03F7/30 ,  G03F7/38 ,  H01L21/0273

摘要： A method of lithography patterning includes coating a resist layer on a substrate; performing an exposing process to the resist layer using a lithography tool with a numerical aperture tuned between about 0.5 and about 0.6; baking the resist layer; thereafter performing a first developing process to the resist layer for a first period of time; and performing a second developing process to the resist layer for a second period of time.

摘要翻译： 光刻图案的方法包括在基板上涂覆抗蚀剂层; 使用数值孔径调节在约0.5和约0.6之间的光刻工具对抗蚀剂层进行曝光处理; 烘烤抗蚀剂层; 然后对所述抗蚀剂层进行第一显影处理第一时间; 以及对所述抗蚀剂层进行第二显影处理第二时间段。