Test structure for determining electromigration and interlayer dielectric failure
    1.
    发明授权
    Test structure for determining electromigration and interlayer dielectric failure 有权
    用于确定电迁移和层间绝缘故障的测试结构

    公开(公告)号:US06897476B1

    公开(公告)日:2005-05-24

    申请号:US10636162

    申请日:2003-08-07

    摘要: According to one exemplary embodiment, a test structure for determining electromigration and interlayer dielectric failure comprises a first metal line situated in a metal layer of the test structure. The test structure further comprises a second metal line situated adjacent and substantially parallel to the first metal line, where the second metal line is separated from the first metal line by a first distance, and where the first distance is substantially equal to minimum design rule separation distance. The test structure further comprises an interlayer dielectric layer situated between the first metal line and the second metal line. According to this exemplary embodiment, electromigration failure is determined when a first resistance of the first metal line or a second resistance of the second metal line is greater than a predetermined resistance, and interlayer dielectric failure is determined when a first current is detected between the first and second metal lines.

    摘要翻译: 根据一个示例性实施例,用于确定电迁移和层间介电故障的测试结构包括位于测试结构的金属层中的第一金属线。 测试结构还包括位于第一金属线附近并基本上平行于第一金属线的第二金属线,其中第二金属线与第一金属线分开第一距离,并且其中第一距离基本上等于最小设计规则分离 距离。 测试结构还包括位于第一金属线和第二金属线之间的层间电介质层。 根据该示例性实施例,当第一金属线的第一电阻或第二金属线的第二电阻大于预定电阻时确定电迁移故障,并且当在第一金属线之间检测到第一电流时确定层间绝缘故障 和第二条金属线。