专利检索 ap:("Hyo-San Lee" OR "Chang-Ki Hong" OR "Kun-Tack Lee" OR "Woo-Gwan Shim" OR "Jeong-Nam Han" OR "Jung-Min Oh" OR "Kwon-Tack Lim" OR "Ha-Soo Hwang" OR "Haldori Vuvaraj" OR "Jae-Monk Jung") AND inv:"Haldori Vuvaraj" 第 1 页

1.

发明申请
ETCHING, CLEANING AND DRYING METHODS USING SUPERCRITICAL FLUID AND CHAMBER SYSTEMS USING THESE METHODS 有权

公开(公告)号：US20120085495A1

公开(公告)日：2012-04-12

申请号：US13326940

申请日：2011-12-15

申请人： Hyo-San Lee , Chang-Ki Hong , Kun-Tack Lee , Woo-Gwan Shim , Jeong-Nam Han , Jung-Min Oh , Kwon-Tack Lim , Ha-Soo Hwang , Haldori Vuvaraj , Jae-Monk Jung

发明人： Hyo-San Lee , Chang-Ki Hong , Kun-Tack Lee , Woo-Gwan Shim , Jeong-Nam Han , Jung-Min Oh , Kwon-Tack Lim , Ha-Soo Hwang , Haldori Vuvaraj , Jae-Monk Jung

IPC分类号： C23F1/08 , B08B3/00

CPC分类号： H01L21/02101 , H01L21/31111 , H01L21/67051 , H01L21/6708 , H01L27/10852 , Y10S134/902

摘要： Provided herein are etching, cleaning and drying methods using a supercritical fluid, and a chamber system for conducting the same. The etching method includes etching the material layer using a supercritical carbon dioxide in which an etching chemical is dissolved, and removing an etching by-product created from a reaction between the material layer and the etching chemical using a supercritical carbon dioxide in which a cleaning chemical is dissolved. Methods of manufacturing a semiconductor device are also provided.