公开(公告)号：US6103432A

公开(公告)日：2000-08-15

申请号：US289540

申请日：1999-04-12

申请人： Hyun-jin Kim ,  Hong-kyu Choi ,  Ki-jun Kim

发明人： Hyun-jin Kim ,  Hong-kyu Choi ,  Ki-jun Kim

IPC分类号： H01L21/027 ,  G03F7/00 ,  G03F7/038 ,  H01J9/227 ,  H01J29/32

CPC分类号： H01J9/2278 ,  G03F7/0007 ,  G03F7/0388

摘要： A method for forming a black matrix includes forming a black matrix applying a photoresist forming composition containing a compound represented by the formula (1) on the inner surface of a panel and drying the same to form a photoresist layer; exposing the photoresist layer; applying a black pigment solution for forming a black matrix on the photoresist layer and drying the same to form a black pigment layer; and developing the resultant structure; ##STR1## wherein, X is a halogen atom and l:m:n is 1.0-4.5:70.0-98.0:1.0-20.0. The method for forming a black matrix is a non-etching method, which is a simplified process and is not detrimental to environment. Also, since the black matrix material can be recovered from a developing solution for recycling, it is economical. Also, since the photoresist forming composition of the present invention has a good photosensitivity, a black matrix having an excellent landing margin can be obtained. Also, blackness of the black matrix pattern can be improved by using a Ti-containing black pigment as the black matrix forming composition.

摘要翻译： 黑色矩阵的形成方法包括在面板的内表面上形成黑色矩阵，该黑色矩阵将含有式（1）表示的化合物的光致抗蚀剂形成用组合物进行干燥而形成光致抗蚀剂层; 曝光光致抗蚀剂层; 在光致抗蚀剂层上施加用于形成黑色矩阵的黑色颜料溶液并将其干燥以形成黑色颜料层; 并开发所得结构; 其中，X为卤原子，l：m：n为1.0-4.5:70.0-98.0:1.0-20.0。 形成黑色矩阵的方法是非蚀刻方法，其是简化的过程并且不会对环境有害。 此外，由于可以从用于再循环的显影液中回收黑色基质材料，因此是经济的。 此外，由于本发明的光致抗蚀剂形成用组合物具有良好的光敏性，因此可以获得具有优异着色裕度的黑色矩阵。 此外，通过使用含钛黑色颜料作为黑矩阵形成组合物，可以提高黑矩阵图案的黑度。

公开(公告)号：US20120033603A1

公开(公告)日：2012-02-09

申请号：US13263721

申请日：2010-04-07

申请人： Han-Byul Seo ,  Hak-Seong Kim ,  Ki-jun Kim ,  Soon-Yil Kwon

发明人： Han-Byul Seo ,  Hak-Seong Kim ,  Ki-jun Kim ,  Soon-Yil Kwon

IPC分类号： H04B7/14 ,  H04H20/71

CPC分类号： H04L5/001 ,  H04L5/0053 ,  H04L5/0094 ,  H04W84/047

摘要： The present invention relates to a data transmission/receiving method and apparatus in a relay communication system. In particular, the data transmission/receiving method through a backhaul link between a base station and a relay node in a relay communication system comprises: composing a backhaul subframe including a control signal transmission period to which a control signal is allocated and a backhaul signal transmission period to which a backhaul signal is allocated and then allocating the backhaul signal; transmitting configuration information about the backhaul subframe, the information containing symbol position or size data of the backhaul signal transmission period, to the relay node through an upper layer signal; and transmitting the backhaul signal having been allocated through the backhaul subframe to the relay node.

摘要翻译： 本发明涉及中继通信系统中的数据发送/接收方法和装置。 特别地，通过中继通信系统中的基站和中继节点之间的回程链路的数据发送/接收方法包括：组成包括控制信号被分配到的控制信号发送周期的回程子帧和回程信号发送 分配回程信号的时段，然后分配回程信号; 通过上层信号向中继节点发送关于回程子帧的配置信息，包含回程信号发送周期的符号位置或大小数据的信息; 以及将已经通过回程子帧分配的回程信号发送到中继节点。

公开(公告)号：US20090279352A1

公开(公告)日：2009-11-12

申请号：US12458700

申请日：2009-07-21

申请人： Jin-seo Noh ,  Ki-jun Kim ,  Yoon-ho Khang ,  Woong-chul Shin ,  Dong-seok Suh

发明人： Jin-seo Noh ,  Ki-jun Kim ,  Yoon-ho Khang ,  Woong-chul Shin ,  Dong-seok Suh

IPC分类号： G11C11/00

CPC分类号： H01L45/06 ,  H01L27/2436 ,  H01L45/1233 ,  H01L45/144

摘要： Example embodiments may provide a doped phase change layer and a method of operating and fabricating a phase change memory with the example embodiment doped phase change layer. The phase change memory may include a storage node having a phase change layer and a switching device, wherein the phase change layer includes indium with a concentration ranging from about 5 at % to about 15 at %. The phase change layer may be a GST layer that includes indium. The phase change layer may be a GST layer that includes gallium.

摘要翻译： 示例性实施例可以提供掺杂相变层以及使用示例性实施例的掺杂相变层来操作和制造相变存储器的方法。 相变存储器可以包括具有相变层和开关器件的存储节点，其中相变层包括浓度范围为约5at％至约15at％的铟。 相变层可以是包括铟的GST层。 相变层可以是包括镓的GST层。

公开(公告)号：US20080023686A1

公开(公告)日：2008-01-31

申请号：US11822319

申请日：2007-07-05

申请人： Jin-seo Noh ,  Ki-jun Kim ,  Yoon-ho Khang ,  Woong-chul Shin ,  Dong-seok Suh

发明人： Jin-seo Noh ,  Ki-jun Kim ,  Yoon-ho Khang ,  Woong-chul Shin ,  Dong-seok Suh

IPC分类号： H01L47/00 ,  H01L21/06

CPC分类号： H01L45/06 ,  H01L27/2436 ,  H01L45/1233 ,  H01L45/144

摘要： Example embodiments may provide a doped phase change layer and a method of operating and fabricating a phase change memory with the example embodiment doped phase change layer. The phase change memory may include a storage node having a phase change layer and a switching device, wherein the phase change layer includes indium with a concentration ranging from about 5 at % to about 15 at %. The phase change layer may be a GST layer that includes indium. The phase change layer may be a GST layer that includes gallium.

摘要翻译： 示例性实施例可以提供掺杂相变层以及使用示例性实施例的掺杂相变层来操作和制造相变存储器的方法。 相变存储器可以包括具有相变层和开关器件的存储节点，其中相变层包括浓度范围为约5at％至约15at％的铟。 相变层可以是包括铟的GST层。 相变层可以是包括镓的GST层。