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1.发明授权Non-volatile memory device and non-volatile memory system having the same 有权具有相同的非易失性存储器件和非易失性存储器系统公开(公告)号：US08576638B2
公开(公告)日：2013-11-05
申请号：US13095159
申请日：2011-04-27
申请人： Hyung-Gon Kim , Hyuk-Jun Yoo , Youn-Yeol Lee , Soo-Woong Lee , Kyung-Min Kim
发明人： Hyung-Gon Kim , Hyuk-Jun Yoo , Youn-Yeol Lee , Soo-Woong Lee , Kyung-Min Kim
IPC分类号： G11C7/10
CPC分类号： G11C29/846 , G11C16/0483
摘要： A non-volatile memory device may include a memory cell array, a page buffer, a column decoder, a column selection circuit and a repair circuit. The memory cell array includes normal memory cells and redundancy memory cells. In one example, the page buffer may load normal data and redundancy data from the memory cell array. The column decoder may generate a normal column selection signal and a redundancy column selection signal in response to a column address. The column selection circuit may select the normal data and redundancy data in response to the normal column selection signal and redundancy column selection signal. The repair circuit may then output one of the normal data and redundancy data.
摘要翻译： 非易失性存储器件可以包括存储单元阵列，页缓冲器，列解码器，列选择电路和修复电路。 存储单元阵列包括正常存储单元和冗余存储单元。 在一个示例中，页面缓冲器可以从存储器单元阵列加载正常数据和冗余数据。 列解码器可以响应于列地址而生成正常列选择信号和冗余列选择信号。 列选择电路可以响应于正常列选择信号和冗余列选择信号来选择正常数据和冗余数据。 然后，修复电路可以输出正常数据和冗余数据之一。
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2.发明申请公开(公告)号：US20110267899A1
公开(公告)日：2011-11-03
申请号：US13095159
申请日：2011-04-27
申请人： Hyung-Gon Kim , Hyuk-Jun Yoo , Youn-Yeol Lee , Soo-Woong Lee , Kyung-Min Kim
发明人： Hyung-Gon Kim , Hyuk-Jun Yoo , Youn-Yeol Lee , Soo-Woong Lee , Kyung-Min Kim
CPC分类号： G11C29/846 , G11C16/0483
摘要： A non-volatile memory device may include a memory cell array, a page buffer, a column decoder, a column selection circuit and a repair circuit. The memory cell array includes normal memory cells and redundancy memory cells. In one example, the page buffer may load normal data and redundancy data from the memory cell array. The column decoder may generate a normal column selection signal and a redundancy column selection signal in response to a column address. The column selection circuit may select the normal data and redundancy data in response to the normal column selection signal and redundancy column selection signal. The repair circuit may then output one of the normal data and redundancy data.
摘要翻译： 非易失性存储器件可以包括存储单元阵列，页缓冲器，列解码器，列选择电路和修复电路。 存储单元阵列包括正常存储单元和冗余存储单元。 在一个示例中，页面缓冲器可以从存储器单元阵列加载正常数据和冗余数据。 列解码器可以响应于列地址而生成正常列选择信号和冗余列选择信号。 列选择电路可以响应于正常列选择信号和冗余列选择信号来选择正常数据和冗余数据。 然后，修复电路可以输出正常数据和冗余数据之一。
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