公开(公告)号：US20160043100A1

公开(公告)日：2016-02-11

申请号：US14668938

申请日：2015-03-25

申请人： Hyunmin LEE ,  CHANGSEOK KANG ,  JONGWON KIM ,  Hyeong PARK

发明人： Hyunmin LEE ,  CHANGSEOK KANG ,  JONGWON KIM ,  Hyeong PARK

IPC分类号： H01L27/115 ,  H01L23/535

CPC分类号： H01L27/11582 ,  H01L23/535 ,  H01L27/11565 ,  H01L2924/0002 ,  H01L2924/00

摘要： Inventive concepts provide semiconductor memory devices and methods of fabricating the same. A stack structure and vertical channel structures are provided on a substrate. The stack structure includes insulating layers and gate electrodes alternately and repeatedly stacked on the substrate. The vertical channel structures penetrate the stack structure. Conductive pads are disposed on the vertical channel structures. An etch stopper covers sidewalls of the conductive pads. Pad contacts are disposed on the conductive pads to be in contact with the conductive pads. The pad contacts are further in contact with the etch stopper.

摘要翻译： 本发明的概念提供半导体存储器件及其制造方法。 堆叠结构和垂直通道结构设置在基板上。 堆叠结构包括在基板上交替重复堆叠的绝缘层和栅电极。 垂直通道结构穿透堆叠结构。 导电垫设置在垂直通道结构上。 蚀刻停止器覆盖导电焊盘的侧壁。 焊盘触点设置在导电焊盘上以与导电焊盘接触。 焊盘触点进一步与蚀刻停止器接触。