公开(公告)号：US20240355597A1

公开(公告)日：2024-10-24

申请号：US18682869

申请日：2022-08-19

Applicant: Lam Research Corporation

Inventor： Chih-Yang CHANG ,  Raphael CASAES ,  Seokmin YUN ,  Shih-Yuan CHENG ,  Chih-Min LIN ,  Shuogang HUANG ,  Anurag Kumar MISHRA

IPC: H01J37/32 ,  H01L21/3213

CPC classification number: H01J37/32862 ,  H01J37/32422 ,  H01J37/3244 ,  H01J37/32926 ,  H01J37/32082 ,  H01J2237/334 ,  H01L21/32136

Abstract: An apparatus for ion beam etching is provided. An ion extractor separates a plasma source chamber from a process chamber. A gas inlet provides gas to the plasma source chamber. An RF power system provides RF power to the plasma source chamber. A process gas source and cleaning gas mixture source are connected to the gas inlet.

公开(公告)号：US12125664B2

公开(公告)日：2024-10-22

申请号：US17575429

申请日：2022-01-13

Applicant: Oxford Instruments Nanotechnology Tools Limited

Inventor： David Pearson ,  Sebastien Pochon ,  Joao Ferreira

IPC: H01J37/08 ,  H01J27/02 ,  H01J37/32

CPC classification number: H01J37/08 ,  H01J27/024 ,  H01J37/32422 ,  H01J2237/083 ,  H01J2237/334

Abstract: A charged particle beam source for a surface processing apparatus is disclosed. The charged particle beam source comprises: a plasma chamber; a plasma generation unit adapted to convert an input gas within the plasma chamber into a plasma containing charged particles; and a grid assembly adjacent an opening of the plasma chamber. The grid assembly comprises one or more grids each having a plurality of apertures therethrough, the one or more grids being electrically biased in use so as to accelerate charged particles from the plasma through the grid(s) to thereby output a charged particle beam, the major axis of which is substantially perpendicular to the plane of the grid assembly. The transmissivity of the or each grid to the charged particles is defined by the relative proportion of aperture area to non-aperture area, and at least one of the grids has a transmissivity which varies across the grid along a first direction, the transmissivity being lower adjacent a first extremity of the grid than adjacent a second extremity of the grid opposite the first extremity, the first direction lying parallel to the plane of the grid assembly, such that in use the charged particle beam output by the source has a non-uniform charged particle current density profile in a plane parallel to the plane of the grid assembly which varies along the first direction, the charged particle current density being lower adjacent a first edge of the beam than adjacent a second edge of the beam opposite the first edge.

公开(公告)号：US20240266147A1

公开(公告)日：2024-08-08

申请号：US18640505

申请日：2024-04-19

Applicant: LAM RESEARCH CORPORATION

Inventor： Andrew Stratton BRAVO ,  Chih-Hsun HSU ,  Serge KOSCHE ,  Stephen WHITTEN ,  Shih-Chung KON ,  Mark KAWAGUCHI ,  Himanshu CHOKSHI ,  Dan ZHANG ,  Gnanamani AMBUROSE

IPC: H01J37/32

CPC classification number: H01J37/32422 ,  H01J37/321 ,  H01J37/32357 ,  H01J37/32467 ,  H01J37/32174

Abstract: A dual ion filter is arranged between upper and lower chambers of a substrate processing system. The dual ion filter includes upper and lower filters. The upper filter includes a first plurality of through holes configured to filter ions from a plasma in the upper chamber. The lower filter includes a second plurality of through holes configured to control plasma uniformity in the lower chamber. A diameter of the first plurality of through holes of the upper filter is less than a diameter of the second plurality of through holes of the lower filter. A number of the first plurality of through holes of the upper filter is greater than a number of the second plurality of through holes of the lower filter.

公开(公告)号：US20240266146A1

公开(公告)日：2024-08-08

申请号：US18106981

申请日：2023-02-07

Applicant: Applied Materials, Inc.

Inventor： Christopher S. OLSEN ,  Rene GEORGE ,  Victor CALDERON

IPC: H01J37/32

CPC classification number: H01J37/32422 ,  H01J2237/15 ,  H01J2237/3323

Abstract: A process chamber is provided including a chamber body disposed around a process volume, the process volume bounded by one or more interior side walls; a substrate support in the process volume; a plasma source disposed over the substrate support, the plasma source having a top and one or more sides disposed around a plasma-generating volume; and a first deflector positioned at least partially in the process volume, the first deflector comprising an annular body having a top, a bottom, one or more outer side surfaces connecting the top with the bottom, and one or more inner side surfaces connecting the top with the bottom. The one or more outer side surfaces of the annular body are spaced apart from the one or more interior side walls of the process volume.

公开(公告)号：US12051566B2

公开(公告)日：2024-07-30

申请号：US17648436

申请日：2022-01-20

Applicant: Tokyo Electron Limited

Inventor： Hitoshi Kato ,  Hiroyuki Kikuchi ,  Shinji Asari ,  Yuji Sawada

IPC: H01J37/32 ,  C23C16/50 ,  H01L21/687 ,  C23C16/458 ,  H01L21/02

CPC classification number: H01J37/32422 ,  C23C16/50 ,  H01J37/32082 ,  H01J37/32715 ,  H01L21/68771 ,  C23C16/4584 ,  H01J37/3211 ,  H01J37/3244 ,  H01J2237/20214 ,  H01J2237/332 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/68764

Abstract: A plasma processing apparatus includes a process chamber. A turntable is disposed in the process chamber and is configured to receive a substrate along a circumferential direction thereof. A process gas supply nozzle is configured to supply a process gas to the turntable. A plasma antenna is disposed on the process chamber at a position covering at least a part of the process gas supply nozzle. An ion trap plate is disposed over the process gas supply nozzle at a position overlapping at least a part of the plasma antenna in the process chamber.

公开(公告)号：US12000047B2

公开(公告)日：2024-06-04

申请号：US18163828

申请日：2023-02-02

Applicant: Lam Research Corporation

Inventor： Rachel E. Batzer ,  Huatan Qiu ,  Bhadri N. Varadarajan ,  Patrick Girard Breiling ,  Bo Gong ,  Will Schlosser ,  Zhe Gui ,  Taide Tan ,  Geoffrey Hohn

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/505 ,  H01L21/67 ,  H01L21/687 ,  B05C13/02 ,  C23C16/458

CPC classification number: C23C16/45565 ,  C23C16/45572 ,  C23C16/505 ,  H01J37/32082 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/3244 ,  H01J37/32522 ,  H01J37/32715 ,  H01L21/67011 ,  H01L21/67017 ,  H01L21/67207 ,  H01L21/68735 ,  H01L21/68742 ,  H01L21/68757 ,  H01L21/68785 ,  B05C13/02 ,  C23C16/4581 ,  C23C16/4583 ,  H01J37/32642 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/6715

Abstract: A substrate processing system includes a first chamber including a substrate support. A showerhead is arranged above the first chamber and is configured to filter ions and deliver radicals from a plasma source to the first chamber. The showerhead includes a heat transfer fluid plenum, a secondary gas plenum including an inlet to receive secondary gas and a plurality of secondary gas injectors to inject the secondary gas into the first chamber, and a plurality of through holes passing through the showerhead. The through holes are not in fluid communication with the heat transfer fluid plenum or the secondary gas plenum.

公开(公告)号：US20240120170A1

公开(公告)日：2024-04-11

申请号：US18477174

申请日：2023-09-28

Applicant: Eagle Harbor Technologies, Inc.

Inventor： Timothy Ziemba ,  Kenneth Miller

IPC: H01J37/24 ,  H01J37/32 ,  H02M3/335

CPC classification number: H01J37/241 ,  H01J37/32422 ,  H02M3/33573

Abstract: A high voltage pulsing power system is disclosed that include a DC power supply, a switch circuit electrically coupled with the DC power supply, a droop control circuit coupled with the switch circuit, and/or an output. The switch circuit includes a plurality of switch modules and produces a plurality of pulses. The droop control circuit includes a droop diode, a droop inductor, and a droop element. The droop diode may be electrically coupled in series between the switch circuit and the transformer primary that allows the negative pulse portion of the pulses to pass from the switching circuit to the transformer primary. The droop inductor and he droop element may be arranged in series across the droop diode to allow the negative pulse portion of the pulses to pass from the switching circuit to the transformer primary and/or store energy from the negative pulse portion of the pulses.

公开(公告)号：US20230386801A1

公开(公告)日：2023-11-30

申请号：US18251077

申请日：2021-10-19

Applicant: Tokyo Electron Limited ,  Kyoto Institute of Technology

Inventor： Tsuyoshi Moriya ,  Haruhiko Himura

IPC: H01J37/32

CPC classification number: H01J37/32697 ,  H01J37/32422 ,  H01J2237/1207 ,  H01J2237/04735 ,  H01J37/3266

Abstract: A plasma processing apparatus includes a processing vessel in which a substrate as a target of a plasma processing is disposed; a plasma forming device configured to form plasma within the processing vessel; a focusing device disposed within the processing vessel, and configured to focus multiple ions in the plasma to output an ion beam; and a sorting device configured to sort out, from the ion beam outputted from the focusing device, a specific ion to be supplied to the substrate.

公开(公告)号：US20230335377A1

公开(公告)日：2023-10-19

申请号：US17721417

申请日：2022-04-15

Applicant: Applied Materials, Inc.

Inventor： Anantha K. SUBRAMANI ,  Seyyed Abdolreza FAZELI ,  Yang GUO ,  Chandrashekara BAGINAGERE ,  Ramcharan SUNDAR ,  Yunho KIM ,  Rajasekhar PATIBANDLA

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/505

CPC classification number: H01J37/3244 ,  H01J37/32422 ,  H01J37/32357 ,  C23C16/45565 ,  C23C16/505 ,  H01J2237/332

Abstract: Methods and apparatus for substrate processing are described. In some embodiments a showerhead assembly includes a heated showerhead having a heater and a gas diffusion plate coupled to the heater, the gas diffusion plate having a plurality of channels extending through the gas diffusion plate; an ion filter spaced from the heated showerhead, the ion filter having a first side facing the heated showerhead and a second side opposite the first side, the ion filter having a plurality of channels extending through the ion filter; a heat transfer ring in contact between the heated showerhead and the ion filter, the heat transfer ring being thermally conductive and electrically insulative, the heat transfer ring comprised of a plurality of elements spaced from one another along an interface between the heated showerhead and the ion filter; and a remote plasma region defined between the heated showerhead and the ion filter.

公开(公告)号：US20230317415A1

公开(公告)日：2023-10-05

申请号：US17712035

申请日：2022-04-01

Applicant: SEMES CO., LTD.

Inventor： Dong Hun KIM ,  Da Som BAE ,  Wan Jae PARK ,  Seong Gil LEE ,  Young Je UM ,  Ji Hwan LEE ,  Dong Sub OH ,  Myoung Sub NOH ,  Joun Taek KOO ,  Du Ri KIM

IPC: H01J37/32 ,  H01L21/3065

CPC classification number: H01J37/3244 ,  H01J37/32422 ,  H01J2237/334 ,  H01L21/3065 ,  H01J37/32568

Abstract: A substrate processing apparatus and method capable of maximizing plasma uniformity are provided. The substrate processing method comprises providing a substrate processing apparatus including a processing space for processing a substrate and a plasma generating module for generating plasma for processing the substrate, wherein the plasma generating module comprises a plurality of first electrodes disposed in parallel with each other in a first direction, a plurality of second electrodes disposed in parallel with each other in a second direction different from the firs direction, and an array including a plurality of micro plasma cells connected to the plurality of first electrodes and the plurality of second electrodes, providing a process gas to the plurality of micro plasma cells, and providing a reaction gas to the processing space, wherein a first micro plasma cell of the plurality of micro plasma cells is provided with a first energy of a first magnitude, and to a second micro plasma cell is provided with a second energy of a second magnitude different from the first magnitude, so that an amount of radicals in plasma generated in the first micro plasma cell is different from an amount of radicals in plasma generated in the second micro plasma cell.