Transparent fabrication masks utilizing masking material selected from the group consisting of spinels, perovskites, garnets, fluorides and oxy-fluorides
    2.
    发明授权
    Transparent fabrication masks utilizing masking material selected from the group consisting of spinels, perovskites, garnets, fluorides and oxy-fluorides 失效
    透明制造面膜使用由螺旋,PEROVSKITES,GARNETS,FLUORIDES和OXY-FLUORIDES组成的组选择的掩蔽材料

    公开(公告)号:US3661436A

    公开(公告)日:1972-05-09

    申请号:US3661436D

    申请日:1970-06-30

    Applicant: IBM

    CPC classification number: G03F1/54 Y10S438/943 Y10S438/945

    Abstract: A mask for the manufacture of semiconductor and other very small components. The mask is comprised of patterns of multi-component oxides and fluorides, such as spinels, perovskites, and garnets. In general, the materials are harder than the components being manufactured and are opaque to the wavelength used in photoresist techniques, while being transparent to the visible wavelengths. Materials with an energy gap between approximately 2.8 eV and 5 eV satisfy these optical properties, a particular example being GaFeO3. These masks are not damaged by surface defects on the components and can be visually aligned.

    Abstract translation: 用于制造半导体和其他非常小的部件的掩模。 掩模由多组分氧化物和氟化物的图案组成,例如尖晶石,钙钛矿和石榴石。 通常,材料比制造的组件更硬,并且对于光致抗蚀剂技术中使用的波长是不透明的,同时对可见波长是透明的。 具有约2.8eV至5eV之间的能隙的材料满足这些光学性质,具体示例为GaFeO 3。 这些掩模不会被部件上的表面缺陷损坏,并且可以在视觉上对准。

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