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1.发明授权Prevention of inversion of p-type semiconductor material during rf sputtering of quartz 失效在QUARTZ的射频溅射期间防止P型半导体材料的反相
公开(公告)号：US3616403A
公开(公告)日：1971-10-26
申请号：US3616403D
申请日：1968-10-25
Applicant: IBM
Inventor： COLLINS ROBERT H , LOGAN JOSEPH S
CPC classification number: H01J37/34 , C23C14/10 , H01L23/291 , H01L2924/0002 , H01L2924/00
Abstract: Method for preventing inversion of semiconductor surfaces during RF sputtering of dielectrics by maintaining a low flat band charge level at the semiconductor interface. The flat band charge level is controlled by rigidly maintaining various parameters of the sputtering system such as target purity, and RF power density, in conjunction with the presence of a thin layer of phosphosilicate glass on the semiconductor which is supported on a dielectric material in floating mode.
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2.发明授权Rf sputtering method and apparatus for producing insulating films of varied physical properties 失效RF溅射方法和设备，用于生产不同物理特性的绝缘膜
公开(公告)号：US3617459A
公开(公告)日：1971-11-02
申请号：US3617459D
申请日：1967-09-15
Applicant: IBM
Inventor： LOGAN JOSEPH S
CPC classification number: C23C14/345 , C23C14/34 , H01J37/34
Abstract: An RF sputtering method wherein the potential of the workpiece relative to the plasma is the sputtering chamber is adjusted to provide a control over the physical characteristics of the resulting sputtered films. The apparatus has an insulated target electrode, an insulated workpiece holder electrode, and a conductive surface in contact with the plasma generated by impressing an RF voltage across the target electrode and workpiece holder electrode. An impedance is provided between the workpiece holder electrode and the conductive surface. The impedance provides a control of the workpiece holder voltage.
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