公开(公告)号：US3676231A

公开(公告)日：1972-07-11

申请号：US3676231D

申请日：1970-02-20

Applicant: IBM

Inventor： MEDVECKY BARTHOLOMEW P ,  OBERAI AVTAR S ,  PLATT ALAN

IPC: H01L29/73 ,  H01L21/00 ,  H01L21/22 ,  H01L21/225 ,  H01L21/331 ,  H01L7/44

CPC classification number: H01L21/2252 ,  H01L21/00

Abstract: A METHOD FOR PRODUCING A DIFFUSED BORON REGION IN A SILICON SEMICONDUCTOR HAVING AN IMPURITY PROFILE CHARACTERIZED AS A STEP FUNCTION AND HAVING A SURFACE IMPURITY CONCENTRATION LESS THAN THE SOLID SOLUBILITY OF BORON IN SILICON WHEREIN THE BODY IS EXPOSED TO A GASEOUS MIXTURE OF O2, AND BBR3, AND AN INERT CARRIER GAS AT AN ELEVATED TEMPERATURE WHICH FORMS A GLASSY BORON RICH LAYER, AND SUBSEQUENTLY HEATING THE RESULTANT BODY IN AN OXIDIZING ENVIROMENT, OR A COMBINATION OXIDIZING AND NONOXIDIZING ENVIROMENTS, TO INCREASE THE DEPTH OF THE DIFFUSED REGION AND SIMULTANEOUSLY REDUCE THE SURFACE CONCENTRATION PRODUCING A PROFILE HAVING A STEP FUNCTION CONFIGURATION.