公开(公告)号：US3706127A

公开(公告)日：1972-12-19

申请号：US3706127D

申请日：1970-04-27

Applicant: IBM

Inventor： OKTAY SEVGIN ,  SCHMECKENBECHER ARNOLD F

IPC: F28F13/00 ,  F28F13/18 ,  H01L23/367 ,  H01L23/373 ,  B01J17/00

CPC classification number: H01L23/3733 ,  F28F13/00 ,  F28F13/187 ,  H01L23/3677 ,  H01L2924/0002 ,  Y10S165/911 ,  Y10T29/4935 ,  H01L2924/00

Abstract: A method is disclosed for producing a brush-like heat exchanging structure on a semiconductor device chip. A given amount of ferromagnetic powder is distributed uniformly in an electroless plating bath. Completed semiconductor device wafers are placed at the bottom of the bath, the rear wafer surfaces facing upward. An array of poles of a single electro-magnet is placed immediately below each wafer, each pole registering with a respective chip position on the wafer. The ferro-magnetic powder is permitted to settle on the rear surfaces of the wafers and then current is applied to each electro-magnet attracting substantially equal amounts of ferro-magnetic powder toward each magnet pole. This results in the erection of brush-like structures of ferromagnetic particles on the rear surfaces of the wafer opposite the individual poles. The bath temperature is then raised to the required operating temperature for electroless plating while each electro magnet remains energized. A uniform deposit of electroless metal transforms the brush-like structures into rigid heat exchangers firmly attached to each wafer at the chip locations. The wafers are then diced to yield individual chips each having its own heat exchanging structure.

Abstract translation: 公开了一种用于在半导体器件芯片上制造刷状热交换结构的方法。 给定量的铁磁粉末均匀地分布在化学镀浴中。 完成的半导体器件晶片放置在电解槽的底部，后晶片表面朝上。 在每个晶片的正下方放置单个电磁体的极数阵列，每个磁极与晶片上的相应芯片位置对准。 允许铁磁性粉末沉淀在晶片的后表面上，然后将电流施加到每个电磁体上，吸引大致相等量的铁磁粉末朝向每个磁极。 这导致在与各个极相对的晶片的后表面上架设铁磁性颗粒的刷状结构。 然后在每个电磁体保持通电的同时，将浴温度提高到所需的无电镀操作温度。 无电金属的均匀沉积将刷状结构转换成在芯片位置牢固地附接到每个晶片的刚性热交换器。 然后对晶片进行切割，以产生各自具有其自己的热交换结构的各个芯片。