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    Method of making crystals of rare earth chalocogenides
    4.
    发明授权
    Method of making crystals of rare earth chalocogenides 失效
    制造稀土致发光二极管晶体的方法

    公开(公告)号：US3370924A

    公开(公告)日：1968-02-27

    申请号：US48371265

    申请日：1965-08-30

    Applicant: IBM

    Inventor： GUERCI CARL F ,  SHAFER MERRILL W

    IPC: C01B19/00 ,  C01F17/00 ,  C01G1/12 ,  C30B9/00 ,  C30B9/06

    CPC classification number: C30B9/06 ,  C01B19/007 ,  C01F17/0043 ,  C01F17/0087 ,  C01G1/12 ,  C30B9/00 ,  C30B29/10 ,  C30B29/16 ,  Y10S117/90

    Abstract: 1,130,149. Rare earth oxide and chalcogenide crystals. INTERNATIONAL BUSINESS MACHINES CORP. 26 April, 1966 [30 Aug., 1965], No. 18129/66. Heading C1A. Crystals of rare earth oxides or chalcogenides are made by heating a mixture of the oxide or chalcogenide and the corresponding rare earth metal in a sealed metal crucible, e.g. of tungsten, rhenium or molybdenum, to between 1650 and 3000‹ C. for 2 to 3 hours, cooling to between 1450‹ and 2800‹ C. for 16 to 20 hours and then cooling to room temp. for 6 to 8 hours. The crucible is cut open and the pure metal chalcogenide crystal, which is just below a thin layer of metal is cut out. Below the crystal is a mixture of metal and metal chalcogenide. The process is preferably used for EuO, EuSe, SaO, SaSe, YbO and YbSe. In the preparation of europium oxide crystals the crucible preferably contains 25-75 molar per cent of the chalcogenide, the rest being metal and the top of the crucible is maintained at a temperature 200‹ C. below that of the base of the crucible. Sulphides and tellurides are specifically included in the term " chalcogenide ".

    Anionic doped divalent europium chalcogenides
    5.
    发明授权
    Anionic doped divalent europium chalcogenides 失效
    阴离子DOPAL DIVALO EUROPIUM CHALCOGENIDES

    公开(公告)号：US3704278A

    公开(公告)日：1972-11-28

    申请号：US3704278D

    申请日：1971-06-22

    Applicant: IBM

    Inventor： SHAFER MERRILL W

    IPC: C30B9/06 ,  H01F1/40 ,  C04B35/50

    CPC classification number: C30B9/06 ,  H01F1/40

    Abstract: THE INVENTION RELATES TO ANIONIC DOPED IVALENT EUROPIUM CHALOGENIDES. THE DIVALENT IONS (O=, S=, SE=, OR TE=) ARE PARTIALLY SUBSTITUTED FOR BY MONOVALENT HALIDE IONS SUCH AS (F-, CL-, BR-, OR I-) IN THE MAGNETICALLY ORDERED EUROPIUM CHALOGENIDES. THE SUBSTITUTION OF HALIDE IONS FOR THE CHALCOGEN IONS ALTERS THE PROPERTIES OF THE HOST CHALOGENIDE IN SEVERAL WAYS, INCLUDING, THE FERROMAGNETIC CURIE TEMPERATURE, RESISTIVITY, METALLIC-TOSEMICONDUCTING TRANSITION AND PHOTOMAGENTIC OR PHOTOCONDUCTIVE EFFECTS.

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