公开(公告)号：US3699482A

公开(公告)日：1972-10-17

申请号：US3699482D

申请日：1971-06-30

Applicant: IBM

Inventor： ASH ERIC A ,  TSENG SAMUEL C-C

IPC: H03H9/02 ,  H03H9/42 ,  H03H9/76 ,  H03H7/36 ,  H03H9/30

CPC classification number: H03H9/76 ,  H03H9/02543 ,  H03H9/42

Abstract: A surface waveguide structure and method of making same. A substrate material consisting either of a piezoelectric ceramic or ferroelectric crystal, is selectively poled by an electric field so as to form an elastic surface wave channel within the substrate structure. The electric field applied cross the substrate causes a polarization of the crystalline structure in those areas influenced by the electric field and has a negligible effect in those areas not exposed to the electric field. The free surface wave velocity is substantially increased in the polarized areas of the substrate and remains unchanged in the unpolarized regions. Poling of the substrate is accomplished by applying an electric field across a pair of electrodes which cover the upper and lower surfaces of the substrate except for a narrow region between the transmitting and receiving surface wave transducers. The process for manufacturing the surface waveguide structure is applicable to both acoustic and optical surface waveguiding devices. Also, the polarization of the substrate may be selectively altered by subsequent application of electric fields across the body of the substrate to make switchable waveguide regions.

Abstract translation: 表面波导结构及其制造方法。 由压电陶瓷或铁电晶体组成的衬底材料通过电场选择性地极化，以在衬底结构内形成弹性表面波通道。 施加的电场穿过衬底会在受电场影响的那些区域中引起晶体结构的极化，并且在不暴露于电场的那些区域中具有可忽略的影响。 在衬底的极化区域中，自由表面波速度显着增加，并且在非偏振区域中保持不变。 通过在覆盖基板的上表面和下表面的一对电极之间施加电场，除了发射和接收表面波换能器之间的窄区域外，实现基板的极化。

公开(公告)号：US3648081A

公开(公告)日：1972-03-07

申请号：US3648081D

申请日：1970-06-30

Applicant: IBM

Inventor： LEAN ERIC G ,  SADAGOPAN VARADACHARI ,  TSENG SAMUEL C-C

IPC: G11C21/02 ,  H03H9/42 ,  H03K5/15 ,  H01V7/00

CPC classification number: G11C21/023 ,  H03H9/423 ,  H03K5/15046

Abstract: An integrated acoustic surface wave device is provided by this disclosure wherein a piezoelectric field associated with an acoustic surface wave causes a material adjacent to the surface to transform from one physical state to another physical state. The changes in state due to the presence of the piezoelectric wave are utilized to detect, amplify and store information. The presence of the piezoelectric wave controls external physical quantities, e.g., voltage and current, for information processing and storage. In particular, an amorphous semiconducting material is deposited on the surface of a piezoelectric surface wave acoustic delay line at a location where the presence of the traversing piezoelectric wave is to be detected. Contact electrodes are provided on the amorphous material and are connected to an external electrical circuit wherein there is a voltage source and a load means. The voltage source provides an electric field in the amorphous material of a value below that necessary to achieve the threshold value for switching the material from a high-voltage and low-current state to a highcurrent and low-voltage state. In this manner, the piezoelectric field of the acoustic surface wave which transiently appears at the amorphous material when added to the externally applied electric field causes it to switch states and thereby gives rise to a pulse indication in the external electrical circuit. Accordingly, an integrated apparatus in accordance with this disclosure includes a piezoelectric surface wave delay line and an amorphous semiconductor film. A transducer on the surface of the piezoelectric crystal generates piezoelectric surface waves therein, and a local receiving transducer which serves as the electrodes for the amorphous semiconductor film intercepts the piezoelectric surface wave. The electric field associated with the surface wave supplements a bias electric field at the amorphous semiconductor film and causes the states thereof to switch and provides an indication of the presence of the piezoelectric wave in the external electric circuit connected to the amorphous film.

Abstract translation: 通过本公开提供了一种集成的声表面波装置，其中与声表面波相关联的压电场使得与表面相邻的材料从一个物理状态转变到另一个物理状态。 由于存在压电波而导致的状态变化被用于检测，放大和存储信息。 压电波的存在控制用于信息处理和存储的外部物理量，例如电压和电流。 特别地，非晶半导体材料沉积在压电表面波声延迟线的表面上，在要检测的横向压电波的存在的位置处。 接触电极设置在非晶材料上并且连接到外部电路，其中存在电压源和负载装置。 电压源在非晶材料中提供的电场值低于实现将材料从高电压和低电流状态切换到高电流和低电压状态的阈值所需的电压值。 以这种方式，当加到外部施加的电场时，在非晶材料瞬时出现的声表面波的压电场导致其转换状态，从而在外部电路中产生脉冲指示。