公开(公告)号：US20240258983A1

公开(公告)日：2024-08-01

申请号：US18424288

申请日：2024-01-26

申请人： Sanan Japan Technology Corporation

发明人： SUBEI SHUN ,  Shinichi Shioi

IPC分类号： H03H3/08 ,  H03H9/02 ,  H03H9/64

CPC分类号： H03H3/08 ,  H03H9/02543 ,  H03H9/02834 ,  H03H9/6483

摘要： An acoustic wave device includes a high acoustic velocity substrate, a medium acoustic velocity layer formed on the main surface of the high acoustic velocity substrate, and a piezoelectric substrate formed directly or via another layer on the main surface of the medium acoustic velocity layer, wherein an acoustic velocity is slowed down gradually from the main surface of the high acoustic velocity substrate toward the main surface of the medium acoustic velocity layer between the high acoustic velocity substrate and the medium acoustic velocity layer; and a method for producing the same.

公开(公告)号：US20240223155A1

公开(公告)日：2024-07-04

申请号：US18394448

申请日：2023-12-22

申请人： Murata Manufacturing co., Ltd.

发明人： John KOULAKIS ,  Drew Morosin

IPC分类号： H03H9/145 ,  H03H3/08 ,  H03H9/02 ,  H03H9/25

CPC分类号： H03H9/145 ,  H03H3/08 ,  H03H9/02543 ,  H03H9/25

摘要： An acoustic resonator is provided that includes a substrate; a piezoelectric layer having first and second surfaces that oppose each other with the second surface coupled to the substrate either directly or via one or more intermediate layers. The piezoelectric layer includes a diaphragm over a cavity extending in at least one of the substrate and the one or more intermediate layers. An interdigital transducer (IDT) is disposed at the piezoelectric layer and has interleaved fingers on the diaphragm. Moreover, first and second dielectric layers are disposed on opposing surfaces of the diaphragm, where the first and second dielectric layers have a first thickness and the piezoelectric layer has a second thickness greater than the first thickness. The first and second dielectric layers each comprise one of ZnS, HfN, HfO2, ZnO and Ta2O5, to improve an electrotechnical coupling of the acoustic resonator.

公开(公告)号：US20240186981A1

公开(公告)日：2024-06-06

申请号：US18218797

申请日：2023-07-06

申请人： Northeastern University

发明人： Cristian CASSELLA ,  Xuanyi ZHAO ,  Onurcan KAYA

IPC分类号： H03H9/145 ,  H03H3/08 ,  H03H9/02 ,  H03H9/25

CPC分类号： H03H9/145 ,  H03H3/08 ,  H03H9/02543 ,  H03H9/25

摘要： Provided herein are acoustic material (AM) CMRs having an active region including a conductive plate suspended over a cavity in a substrate and anchored to the substrate by two y-anchors, a piezoelectric layer disposed on the conductive plate, and an interdigitated metal structure (IDT) to cause transduction for excitement of a longitudinal mode of vibration of the AM CMR; and a pair of AM reflectors (AMRs) forming lateral anchors anchored to the substrate and attached to opposite sides of the conductive plate along the direction of vibration of the AM CMR, the AMRs each including a conductive anchor plate suspended over the cavity in the substrate, and a piezoelectric layer disposed on the conductive plate, and a parallel array of rods disposed on the piezoelectric layer, wherein the AMRs are configured to generate an acoustic stopband for inhibiting lateral leakage of the excited longitudinal mode of vibration.

公开(公告)号：US11984875B2

公开(公告)日：2024-05-14

申请号：US17054693

申请日：2019-05-03

申请人： RF360 SINGAPORE PTE. LTD.

发明人： Sebastian Bertl

IPC分类号： H03H9/02 ,  H03H9/145 ,  H03H9/25 ,  H03H9/64 ,  H03H9/72

CPC分类号： H03H9/72 ,  H03H9/02543 ,  H03H9/145 ,  H03H9/25 ,  H03H9/6483

摘要： A radio frequency multiplexer comprises send and receive circuits each including a RF filter circuit. The send and receive circuits are coupled to an antenna port and corresponding send and receive ports. A portion of the send circuit and a portion of the receive circuit are disposed on a single die. The layer stacks of the resonators of the send and receive circuits disposed on the single die can be optimized for the required functionality.

公开(公告)号：US20240040930A1

公开(公告)日：2024-02-01

申请号：US18485899

申请日：2023-10-12

申请人： Soitec

发明人： Marcel Broekaart

IPC分类号： H10N30/072 ,  H03H9/02 ,  H03H3/10 ,  H10N30/00

CPC分类号： H10N30/072 ,  H03H9/02574 ,  H03H3/10 ,  H03H9/02543 ,  H10N30/1051 ,  H10N30/10516

摘要： A hybrid structure for a surface acoustic wave device comprises a useful layer of piezoelectric material having a first free surface and a second surface disposed on a support substrate that has a lower coefficient of thermal expansion than that of the useful layer, wherein the useful layer comprises an area of nanocavities.

公开(公告)号：US11855609B2

公开(公告)日：2023-12-26

申请号：US17183429

申请日：2021-02-24

申请人： Murata Manufacturing Co., Ltd.

发明人： Ryo Nakagawa ,  Hideki Iwamoto

IPC分类号： H03H9/64 ,  H03H9/02 ,  H03H9/145 ,  H03H9/25 ,  H03H9/72

CPC分类号： H03H9/6406 ,  H03H9/02543 ,  H03H9/14541 ,  H03H9/25 ,  H03H9/6483 ,  H03H9/725

摘要： An acoustic wave device includes N band pass filters with first ends connected to define a common connection and having different pass bands. At least one of the band pass filters includes acoustic wave resonators including a lithium tantalate film having Euler angles (φLT=0°±5°, θLT, ψLT=0°±15°), a silicon support substrate, a silicon oxide film between the lithium tantalate film and the silicon support substrate, an IDT electrode, and a protective film. In at least one acoustic wave resonator, a frequency fh1_t(n) satisfies Formula (3) or Formula (4) for all m where m>n:

fh1_t(n)>fu(m)  Formula (3); and

fh1_t(n)

公开(公告)号：US11646715B2

公开(公告)日：2023-05-09

申请号：US17016677

申请日：2020-09-10

申请人： SHENZHEN SUNWAY COMMUNICATION CO., LTD.

发明人： Chengcheng Yu ,  Yanjie Cao ,  Wei Wang

IPC分类号： H03H9/54 ,  H03H9/02 ,  H03H9/05 ,  H03H9/13 ,  H03H9/17 ,  H03H9/56 ,  H03H9/70 ,  H03H9/145 ,  H03H9/25 ,  H03H9/64 ,  H03H9/72 ,  H03F3/24 ,  H04B1/38 ,  H04L25/03

CPC分类号： H03H9/542 ,  H03F3/245 ,  H03H9/02031 ,  H03H9/02102 ,  H03H9/02118 ,  H03H9/02543 ,  H03H9/02559 ,  H03H9/02834 ,  H03H9/02866 ,  H03H9/058 ,  H03H9/059 ,  H03H9/0514 ,  H03H9/0533 ,  H03H9/132 ,  H03H9/145 ,  H03H9/173 ,  H03H9/175 ,  H03H9/176 ,  H03H9/25 ,  H03H9/562 ,  H03H9/564 ,  H03H9/6489 ,  H03H9/703 ,  H03H9/72 ,  H04B1/38 ,  H04L25/03 ,  H03F2200/294 ,  H03F2200/451

摘要： The invention provides a filter device, an RF front-end device and a wireless communication device. The filter device comprises a substrate, at least one resonance device, a passive device and a connector, wherein the at least one resonance device has a first side and a second side opposite to the first side, the substrate is located on the first side, and the passive device is located on the second side. The at least one resonance device is connected to the passive device through the connector. The RF filter device formed by integrating the resonance device (such as an SAW resonance device or a BAW resonance device) and the passive device (such as an IPD) in one die can broaden the passband width, has a high out-of-band rejection, and occupies less space in an RF front-end chip.

公开(公告)号：US09978894B2

公开(公告)日：2018-05-22

申请号：US15470628

申请日：2017-03-27

申请人： Robbie J. Jorgenson

发明人： Robbie J. Jorgenson

IPC分类号： H01L31/0304 ,  H01L21/02 ,  H01L31/0352 ,  H01L31/18 ,  H01L33/00 ,  H01L33/06 ,  H01L33/10 ,  B82Y20/00 ,  G02B6/122 ,  H01L29/20 ,  H01L33/32 ,  H01L41/187 ,  H01L31/0232 ,  H03H9/02

CPC分类号： H01L31/03044 ,  B82Y20/00 ,  G02B6/1225 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02491 ,  H01L21/02507 ,  H01L21/0254 ,  H01L29/2003 ,  H01L31/02327 ,  H01L31/035209 ,  H01L31/1856 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/10 ,  H01L33/32 ,  H01L41/187 ,  H01L2933/0058 ,  H03H9/02015 ,  H03H9/02543

摘要： The present invention provides materials, structures, and methods for III-nitride-based devices, including epitaxial and non-epitaxial structures useful for III-nitride devices including light emitting devices, laser diodes, transistors, detectors, sensors, and the like. In some embodiments, the present invention provides metallo-semiconductor and/or metallo-dielectric devices, structures, materials and methods of forming metallo-semiconductor and/or metallo-dielectric material structures for use in semiconductor devices, and more particularly for use in III-nitride based semiconductor devices. In some embodiments, the present invention includes materials, structures, and methods for improving the crystal quality of epitaxial materials grown on non-native substrates. In some embodiments, the present invention provides materials, structures, devices, and methods for acoustic wave devices and technology, including epitaxial and non-epitaxial piezoelectric materials and structures useful for acoustic wave devices. In some embodiments, the present invention provides metal-base transistor devices, structures, materials and methods of forming metal-base transistor material structures for use in semiconductor devices.

公开(公告)号：US09948274B2

公开(公告)日：2018-04-17

申请号：US14541180

申请日：2014-11-14

申请人： Murata Manufacturing Co., Ltd.

发明人： Keiichi Umeda ,  Ryo Nakagawa ,  Atsushi Tanaka

IPC分类号： H01L41/047 ,  H03H9/02 ,  H01L41/16

CPC分类号： H03H9/02543 ,  H01L41/047 ,  H01L41/16 ,  H03H9/02574 ,  H03H9/0296

摘要： A surface acoustic wave device includes a high acoustic velocity film in which a transversal wave propagates at a higher acoustic velocity than in a ScAlN film laminated on a substrate made of silicon or glass. The ScAlN film is laminated on the high acoustic velocity film, and IDT electrodes are laminated on the ScAlN film.

公开(公告)号：US09614494B2

公开(公告)日：2017-04-04

申请号：US14763494

申请日：2013-03-15

申请人： EPCOS AG

发明人： Ralph Durner ,  Ravi Kiran Challa ,  Wolfgang Till ,  Aleh Loseu

IPC分类号： H03H7/38 ,  H03H9/205 ,  H03H9/02 ,  H03H9/54 ,  H03H9/60 ,  H03H9/64 ,  H01F38/14 ,  H03H9/70 ,  H03H9/72

CPC分类号： H03H9/205 ,  H01F38/14 ,  H01F2038/146 ,  H03H9/02015 ,  H03H9/02543 ,  H03H9/542 ,  H03H9/605 ,  H03H9/6483 ,  H03H9/706 ,  H03H9/725

摘要： A reactance filter includes a series branch that includes a number of series impedance elements that are coupled in series and a number of parallel branches each having a parallel impedance element coupled to a respective node of the series branch. Each impedance element includes a resonator that works with acoustic waves. The resonators in the series branch include a first piezoelectric material and the resonators in the parallel branches include a second piezoelectric material that is different than the first piezoelectric material.