公开(公告)号：US20130221348A1

公开(公告)日：2013-08-29

申请号：US13838337

申请日：2013-03-15

Applicant: IDEMITSU KOSAN CO., LTD.

Inventor： Koki YANO ,  Kazuyoshi INOUE ,  Yukio SHIMANE ,  Tadao SHIBUYA ,  Masahiro YOSHINAKA

IPC: H01L29/66 ,  H01L29/786

CPC classification number: H01L29/66742 ,  C01G19/00 ,  C01P2006/40 ,  H01L29/66969 ,  H01L29/7869

Abstract: A transparent semiconductor thin film 40 having low carrier concentration and a large energy band gap is produced by forming a thin film which contains indium oxide and an oxide of a positive divalent element, and then oxidizing or crystallizing the thin film.