公开(公告)号：US09190990B1

公开(公告)日：2015-11-17

申请号：US14464741

申请日：2014-08-21

Applicant: ILI TECHNOLOGY CORP.

Inventor： Hsi-En Liu ,  Sung-Yau Yeh

IPC: H03L5/00 ,  H03K5/02 ,  H03K19/0185

CPC classification number: H03K3/356113 ,  H03K5/023 ,  H03K19/0185 ,  H03K19/018521

Abstract: The present disclosure provides a high-voltage level conversion circuit at least comprising a first NMOS transistor, a first PMOS transistor, a second NMOS transistor, a second PMOS transistor, a third PMOS transistor, a third NMOS transistor, a fourth PMOS transistor and a fourth NMOS transistor for receiving an input signal have a first voltage level and a second voltage level and converting the input signal to an output signal having a third voltage level and a fourth voltage level. Compared to conventional high-voltage level conversion circuits the provided high-voltage level conversion circuit occupies less circuit area.

Abstract translation: 本公开提供了一种高压电平转换电路，其至少包括第一NMOS晶体管，第一PMOS晶体管，第二NMOS晶体管，第二PMOS晶体管，第三PMOS晶体管，第三NMOS晶体管，第四PMOS晶体管和 用于接收输入信号的第四NMOS晶体管具有第一电压电平和第二电压电平，并将输入信号转换为具有第三电压电平和第四电压电平的输出信号。 与传统的高压电平转换电路相比，提供的高压电平转换电路占用较少的电路面积。