公开(公告)号：US20250151312A1

公开(公告)日：2025-05-08

申请号：US18934774

申请日：2024-11-01

Applicant: IMEC VZW

Inventor： Sachin Yadav ,  Bernardette Kunert ,  Bjorn Vermeersch ,  Bertrand Parvais ,  Abhitosh Vais ,  Guillaume Boccardi ,  Annie Kumar

IPC: H01L29/778 ,  H01L29/66 ,  H01L29/737

Abstract: Example embodiments relate to semiconductor processing methods and semiconductor components obtainable by applying the semiconductor processing methods. One example method includes providing a substrate formed of a first semiconductor material. The method also includes providing a mesa structure on the substrate and in direct contact with the substrate. The mesa structure is isolated on all lateral sides by dielectric material. Active layers of a semiconductor device are integrated in an upper portion of the mesa structure. Additionally, the method includes producing one or more openings through the dielectric material. Further, the method includes forming a cavity by removing a bottom portion of the mesa structure through the one or more openings or removing the dielectric material in a region directly adjacent to the bottom portion of the mesa structure. In addition, the method includes obtaining a thermally conductive volume by filling the cavity with a material of high thermal conductivity.