公开(公告)号：US20210320001A1

公开(公告)日：2021-10-14

申请号：US17225644

申请日：2021-04-08

Applicant: IMEC VZW

Inventor： Daire Cott ,  Elie Schapmans

IPC: H01L21/02

Abstract: A method for growing a dielectric material on a surface comprises introducing the surface into a first process chamber; in the first process chamber, exposing the surface to a first precursor, thereby adsorbing the first precursor to the surface; without purging the first process chamber, introducing the surface into a second process chamber; and in the second process chamber, exposing the surface to a second precursor thereby reacting the adsorbed first precursor with the second precursor to grow the dielectric material on the surface.