公开(公告)号：US20180182868A1

公开(公告)日：2018-06-28

申请号：US15845300

申请日：2017-12-18

Applicant: IMEC VZW

Inventor： Boon Teik Chan ,  Silvia Armini ,  Elisabeth Camerotto ,  Zheng Tao

IPC: H01L29/66 ,  H01L29/78 ,  H01L29/06

Abstract: A method for forming horizontal nanowires, the method comprising providing a substrate comprising a dielectric layer and a fin structure comprising a portion protruding from the dielectric layer, the protruding portion being partially un-masked and comprising a multi-layer stack consisting of a layer of a first material stacked alternately and repeatedly with a layer of a second material and forming horizontal nanowires done by performing a cycle comprising removing selectively the first material up to the moment that a horizontal nanowire of the second material becomes suspended over a remaining portion of the partially un-masked protruding portion, forming a sacrificial layer on the remaining portion, while leaving the suspended horizontal nanowire uncovered, providing, selectively, a cladding layer on the suspended horizontal nanowire, and thereafter removing the sacrificial layer. The horizontal nanowires become suspended starting from the top and the cladding layer is removed, after the bottom horizontal nanowire becomes suspended.

公开(公告)号：US10790382B2

公开(公告)日：2020-09-29

申请号：US15845300

申请日：2017-12-18

Applicant: IMEC VZW

Inventor： Boon Teik Chan ,  Silvia Armini ,  Elisabeth Camerotto ,  Zheng Tao

IPC: H01L29/66 ,  H01L29/775 ,  H01L29/10 ,  H01L29/786 ,  H01L29/423 ,  H01L29/06 ,  H01L29/78 ,  B82Y10/00

Abstract: A method for forming horizontal nanowires, the method comprising providing a substrate comprising a dielectric layer and a fin structure comprising a portion protruding from the dielectric layer, the protruding portion being partially un-masked and comprising a multi-layer stack consisting of a layer of a first material stacked alternately and repeatedly with a layer of a second material and forming horizontal nanowires done by performing a cycle comprising removing selectively the first material up to the moment that a horizontal nanowire of the second material becomes suspended over a remaining portion of the partially un-masked protruding portion, forming a sacrificial layer on the remaining portion, while leaving the suspended horizontal nanowire uncovered, providing, selectively, a cladding layer on the suspended horizontal nanowire, and thereafter removing the sacrificial layer. The horizontal nanowires become suspended starting from the top and the cladding layer is removed, after the bottom horizontal nanowire becomes suspended.