公开(公告)号：US12279911B2

公开(公告)日：2025-04-22

申请号：US18042243

申请日：2021-07-01

Applicant: IMEC VZW

Inventor： Florian De Roose ,  Kris Myny

IPC: A61B8/00

Abstract: This patent disclosure relates to an ultrasound transducer including an array of ultrasound transducing elements, a plurality of transducer drive lines. The ultrasound transducer further includes an array of control circuits, wherein each individual control circuit includes a drive switch and a memory element, the drive switch comprising at least one thin-film transistor, the memory element being configured to store and control the state of the drive switch. The ultrasound transducer further configured so each individual ultrasound transducing element of the array of ultrasound transducing elements has one associated control circuit of the array of control circuits and one associated transducer drive line of the plurality of transducer drive lines, and wherein the ultrasound transducer is configured to, for each individual ultrasound transducing element, drive the individual ultrasound transducing element by the associated transducer drive line when the drive switch of the associated control circuit is in the on-state.

公开(公告)号：US20210278555A1

公开(公告)日：2021-09-09

申请号：US16332592

申请日：2017-08-30

Applicant: IMEC VZW ,  Katholieke Universiteit Leuven, KU LEUVEN R&D

Inventor： Florian De Roose ,  Rainer Kuth ,  Soeren Steudel ,  Sandro Francesco Tedde

IPC: G01T1/24 ,  H04N5/32 ,  G01T1/20

Abstract: An example includes sensing radiation with a photo diode; storing, in a pixel capacitor electrically coupled to the photo diode, electric charge supplied by the photo diode in response to the sensed radiation; providing a pixel amplifier output signal at an output link of a pixel amplifier having an input link electrically coupled to the pixel capacitor, where the pixel amplifier output signal depends on an amount of the electric charge stored in the capacitor; providing, to analyzing circuitry of the image sensor apparatus, a pixel output signal at a pixel output link of the radiation sensing pixel element by a pixel selector transistor, the pixel output signal being dependent on the pixel amplifier output signal and a selector control signal provided by the analyzing circuitry; and controlling a gain defining a dependency between the pixel output signal and the amount of the electric charge stored in the capacitor.

公开(公告)号：US20230309966A1

公开(公告)日：2023-10-05

申请号：US18042243

申请日：2021-07-01

Applicant: IMEC VZW

Inventor： Florian De Roose ,  Kris Myny

IPC: A61B8/00

CPC classification number: A61B8/4494 ,  A61B8/4488 ,  A61B8/4281

Abstract: This patent disclosure relates to an ultrasound transducer including an array of ultrasound transducing elements, a plurality of transducer drive lines. The ultrasound transducer further includes an array of control circuits, wherein each individual control circuit includes a drive switch and a memory element, the drive switch comprising at least one thin-film transistor, the memory element being configured to store and control the state of the drive switch. The ultrasound transducer further configured so each individual ultrasound transducing element of the array of ultrasound transducing elements has one associated control circuit of the array of control circuits and one associated transducer drive line of the plurality of transducer drive lines, and wherein the ultrasound transducer is configured to, for each individual ultrasound transducing element, drive the individual ultrasound transducing element by the associated transducer drive line when the drive switch of the associated control circuit is in the on-state.

公开(公告)号：US20220349749A1

公开(公告)日：2022-11-03

申请号：US17723970

申请日：2022-04-19

Applicant: IMEC VZW ,  Katholieke Universiteit Leuven, KU LEUVEN R&D

Inventor： Aris Siskos ,  Florian De Roose ,  Kris Myny ,  Wim Dehaene

IPC: G01J1/44 ,  H03F3/16 ,  H04N5/3745

Abstract: A charge sensor element includes a charge collecting detector configured to generate an intensity signal indicative of an amount of charge at an internal charge sensor element node, an amplifier transistor that is electrically connected to the internal charge sensor element node and configured to amplify the intensity signal, and a reset transistor that is electrically connected to the internal charge sensor element node and configured to reset the intensity signal. The amplifier transistor or the reset transistor includes a front gate and a back gate that are configured to control the amplifier transistor or the reset transistor.

公开(公告)号：US12205973B2

公开(公告)日：2025-01-21

申请号：US17572817

申请日：2022-01-11

Applicant: IMEC VZW

Inventor： Jiwon Lee ,  Kris Myny ,  Florian De Roose ,  Pierre Boulenc

IPC: H01L27/146

Abstract: An image sensor comprises at least two vertically stacked photo-sensitive devices wherein each respective photo-sensitive device comprises a stack of a top electrode, a first charge transport layer and an active layer. Each respective stack generates electrical charges in response to a corresponding predefined range of wavelengths of light incident on the image sensor.
Each photo-sensitive device further comprises a second charge transport layer having a first portion, vertically aligned underneath the active layer, and a second portion, transfer region, protruding laterally to extend beyond the active layer. A dielectric layer separates the first portion from a bottom electrode providing a voltage for depleting the first portion, and the transfer region from a transfer gate providing a voltage for transferring the generated electrical charge to a floating electrical connection, shared by all stacked photo-sensitive devices.
The floating electrical connection couples to a read-out-circuitry.

公开(公告)号：US20220223643A1

公开(公告)日：2022-07-14

申请号：US17572817

申请日：2022-01-11

Applicant: IMEC VZW

Inventor： Jiwon Lee ,  Kris Myny ,  Florian De Roose ,  Pierre Boulenc

IPC: H01L27/146

Abstract: An image sensor comprises at least two vertically stacked photo-sensitive devices wherein each respective photo-sensitive device comprises a stack of a top electrode, a first charge transport layer and an active layer. Each respective stack generates electrical charges in response to a corresponding predefined range of wavelengths of light incident on the image sensor.
Each photo-sensitive device further comprises a second charge transport layer having a first portion, vertically aligned underneath the active layer, and a second portion, transfer region, protruding laterally to extend beyond the active layer. A dielectric layer separates the first portion from a bottom electrode providing a voltage for depleting the first portion, and the transfer region from a transfer gate providing a voltage for transferring the generated electrical charge to a floating electrical connection, shared by all stacked photo-sensitive devices.
The floating electrical connection couples to a read-out-circuitry.