公开(公告)号：US20220271755A1

公开(公告)日：2022-08-25

申请号：US17740759

申请日：2022-05-10

Applicant: IMEC VZW

Inventor： Francky CATTHOOR ,  Edouard GIACOMIN ,  Juergen BOEMMELS ,  Julien RYCKAERT

IPC: H03K19/17736 ,  H01L27/06

Abstract: According to an aspect of the present inventive concept there is provided 3D IC, comprising: a plurality of logic cells stacked on top of each other, each logic cell forming part of one of a plurality of vertically stacked device tiers of the 3D IC, and each logic cell comprising a network of logic gates, each logic gate comprising a network of horizontal channel transistors, wherein a layout of the network of logic gates of each logic cell is identical among said logic cells such that each logic gate of any one of said logic cells has a corresponding logic gate in each other one of said logic cells, and wherein each logic cell comprises: a single active layer forming an active semiconductor pattern of the transistors of the logic gates of the logic cell, and a single layer of horizontally extending conductive lines comprising gate lines defining transistor gates of the transistors, and wiring lines forming interconnections in the network of transistors and in the network of logic gates of said logic cell.

公开(公告)号：US20220109447A1

公开(公告)日：2022-04-07

申请号：US17063003

申请日：2020-10-05

Applicant: IMEC VZW

Inventor： Francky CATTHOOR ,  Edouard GIACOMIN ,  Juergen BOEMMELS ,  Julien RYCKAERT

IPC: H03K19/17736 ,  H01L27/06

Abstract: According to an aspect of the present inventive concept there is provided 3D IC, comprising: a plurality of logic cells stacked on top of each other, each logic cell forming part of one of a plurality of vertically stacked device tiers of the 3D IC, and each logic cell comprising a network of logic gates, each logic gate comprising a network of horizontal channel transistors, wherein a layout of the network of logic gates of each logic cell is identical among said logic cells such that each logic gate of any one of said logic cells has a corresponding logic gate in each other one of said logic cells, and wherein each logic cell comprises: a single active layer forming an active semiconductor pattern of the transistors of the logic gates of the logic cell, and a single layer of horizontally extending conductive lines comprising gate lines defining transistor gates of the transistors, and wiring lines forming interconnections in the network of transistors and in the network of logic gates of said logic cell.