公开(公告)号：US20240038589A1

公开(公告)日：2024-02-01

申请号：US17877500

申请日：2022-07-29

Applicant: IMEC VZW

Inventor： Anna Yurievna HERR ,  Quentin Paul HERR ,  Zsolt TOKEI ,  Anshul GUPTA

IPC: H01L21/768 ,  H01L23/522

CPC classification number: H01L21/76897 ,  H01L21/76885 ,  H01L23/5226 ,  H01L23/53285

Abstract: A method for forming a superconducting interconnect structure, comprising: providing a substrate, forming a superconductive layer, forming a layer of a first dielectric material, removing parts of the layer of the first dielectric material and of the superconductive layer so as to form a pattern comprising a first set of line structures comprising: a first set of superconductive line structures, and a first set of line structures made of the first dielectric material, forming a second dielectric material between the line structures of the first set, forming a layer formed of a third dielectric material, providing a patterned mask, transferring the pattern into the first dielectric material and into the layer formed of the third dielectric material, so as to form the at least one via hole, removing the patterned mask, and forming a superconductive material layer so as to form at least one via.