公开(公告)号：US20230197514A1

公开(公告)日：2023-06-22

申请号：US18066400

申请日：2022-12-15

Applicant: IMEC VZW

Inventor： Victor Hugo Vega Gonzalez ,  Bilal Chehab ,  Julien Ryckaert ,  Zsolt Tokei ,  Serge Biesemans ,  Naoto Horiguchi

IPC: H01L21/768 ,  H01L21/3213 ,  H01L23/522

CPC classification number: H01L21/76897 ,  H01L21/32139 ,  H01L21/76885 ,  H01L23/5226 ,  H01L21/32136 ,  H01L27/092

Abstract: The disclosure relates to a metallization process for an integrated circuit. One example metallization process includes a method for forming an integrated circuit that includes providing a semiconductor structure having two transistor structures, a gate structure, electrically conductive contacts, a first electrically conductive line, a first electrically conductive via, a second electrically conductive via. The method further includes providing a planar dielectric material in contact with the first electrically conductive line, forming an opening in the planar dielectric material, filling the opening with a planar electrically conductive material, forming an electrically conductive layer arranged within a second metallization level, the electrically conductive layer being in physical contact with the planar dielectric material and in physical and electrical contact with the electrically conductive material, providing a hard mask comprising a set of parallel lines, and etching the electrically conductive layer and the planar electrically conductive material by using the hard mask lines as a mask.