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公开(公告)号：US11556043B2
公开(公告)日：2023-01-17
申请号：US17348049
申请日：2021-06-15
Applicant: IMEC VZW
Inventor： Younghyun Kim , Didit Yudistira , Bernardette Kunert , Joris Van Campenhout , Maria Ioanna Pantouvaki
Abstract: A monolithic integrated electro-optical phase modulator, a Mach-Zehnder modulator including one or more of the phase modulators, and method for fabricating the phase modulator by III-V-on-silicon semiconductor processing are provided. The phase modulator includes a silicon-based n-type substrate base layer, and a III-V n-type ridge waveguide for propagating light, wherein the ridge waveguide protrudes from and extends along the n-type substrate base layer. Further, the phase modulator includes one or more insulating layers provided on the ridge waveguide, wherein the one or more insulating layers have together a thickness of 1-100 nm, and a silicon-based p-type top cover layer provided on the one or more insulating layers at least above the ridge waveguide.
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公开(公告)号：US20220011641A1
公开(公告)日：2022-01-13
申请号：US17348049
申请日：2021-06-15
Applicant: IMEC VZW
Inventor： Younghyun Kim , Didit Yudistira , Bernardette Kunert , Joris Van Campenhout , Maria Ioanna Pantouvaki
Abstract: A monolithic integrated electro-optical phase modulator, a Mach-Zehnder modulator including one or more of the phase modulators, and method for fabricating the phase modulator by III-V-on-silicon semiconductor processing are provided. The phase modulator includes a silicon-based n-type substrate base layer, and a III-V n-type ridge waveguide for propagating light, wherein the ridge waveguide protrudes from and extends along the n-type substrate base layer. Further, the phase modulator includes one or more insulating layers provided on the ridge waveguide, wherein the one or more insulating layers have together a thickness of 1-100 nm, and a silicon-based p-type top cover layer provided on the one or more insulating layers at least above the ridge waveguide.
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