公开(公告)号：US20210375668A1

公开(公告)日：2021-12-02

申请号：US17329556

申请日：2021-05-25

Applicant: IMEC VZW

Inventor： Didit Yudistira ,  Alexey Milenin

IPC: H01L21/762 ,  H01L21/306 ,  H01L21/3065 ,  H01L23/00

Abstract: A Silicon on Insulator (SOI) structure and a method for creating an undercut (UCUT) in an SOI structure, in particular, for a 300 mm SOI platform, is provided. In particular, the method includes fabricating one or more cavities in a silicon substrate underneath an insulator layer of the SOI structure by performing a first dry etch of the silicon substrate to create the one or more cavities, performing a first wet etch of the silicon substrate to expand the one or more cavities, performing a second dry etch of the silicon substrate to further expand the one or more cavities and to break silicon facets created by the first wet etch, and performing a second wet etch to further expand the one or more cavities.

公开(公告)号：US11556043B2

公开(公告)日：2023-01-17

申请号：US17348049

申请日：2021-06-15

Applicant: IMEC VZW

Inventor： Younghyun Kim ,  Didit Yudistira ,  Bernardette Kunert ,  Joris Van Campenhout ,  Maria Ioanna Pantouvaki

IPC: G02F1/225 ,  G02F1/21 ,  H01L29/66 ,  H01L29/94

Abstract: A monolithic integrated electro-optical phase modulator, a Mach-Zehnder modulator including one or more of the phase modulators, and method for fabricating the phase modulator by III-V-on-silicon semiconductor processing are provided. The phase modulator includes a silicon-based n-type substrate base layer, and a III-V n-type ridge waveguide for propagating light, wherein the ridge waveguide protrudes from and extends along the n-type substrate base layer. Further, the phase modulator includes one or more insulating layers provided on the ridge waveguide, wherein the one or more insulating layers have together a thickness of 1-100 nm, and a silicon-based p-type top cover layer provided on the one or more insulating layers at least above the ridge waveguide.

公开(公告)号：US20220011641A1

公开(公告)日：2022-01-13

申请号：US17348049

申请日：2021-06-15

Applicant: IMEC VZW

Inventor： Younghyun Kim ,  Didit Yudistira ,  Bernardette Kunert ,  Joris Van Campenhout ,  Maria Ioanna Pantouvaki

IPC: G02F1/225 ,  G02F1/21 ,  H01L29/94 ,  H01L29/66

Abstract: A monolithic integrated electro-optical phase modulator, a Mach-Zehnder modulator including one or more of the phase modulators, and method for fabricating the phase modulator by III-V-on-silicon semiconductor processing are provided. The phase modulator includes a silicon-based n-type substrate base layer, and a III-V n-type ridge waveguide for propagating light, wherein the ridge waveguide protrudes from and extends along the n-type substrate base layer. Further, the phase modulator includes one or more insulating layers provided on the ridge waveguide, wherein the one or more insulating layers have together a thickness of 1-100 nm, and a silicon-based p-type top cover layer provided on the one or more insulating layers at least above the ridge waveguide.