公开(公告)号：US20240188304A1

公开(公告)日：2024-06-06

申请号：US18526150

申请日：2023-12-01

Applicant: IMEC VZW ,  KATHOLIEKE UNIVERSITEIT LEUVEN

Inventor： Jan Van Houdt ,  Shankha Mukherjee ,  Sergiu Clima ,  Jasper Bizindavyi

IPC: H10B53/30 ,  H01L21/28

CPC classification number: H10B53/30 ,  H01L28/60 ,  H01L29/40111

Abstract: The disclosure relates to a capacitive memory structure (10), comprising: a substrate (11); a first metallic layer (12) on the substrate; a ferroelectric material layer (13) on the first metallic layer (12); wherein the ferroelectric material layer (13) is electrically excitable to two polarization states, each polarization state representing a memory state of the capacitive memory structure (10). The capacitive memory structure (10) further comprises a second metallic layer (14) on the ferroelectric material layer (13); wherein the first metallic layer (12) and the second metallic layer (14) have different work functions.