公开(公告)号：US20150287807A1

公开(公告)日：2015-10-08

申请号：US14667376

申请日：2015-03-24

Applicant: IMEC VZW ,  Samsung Electronics Co., Ltd.

Inventor： Seung Hun Lee ,  Eneman Geert

IPC: H01L29/66 ,  H01L21/308 ,  H01L29/78 ,  H01L29/165 ,  H01L29/205 ,  H01L21/3065 ,  H01L21/02

CPC classification number: H01L29/66545 ,  H01L21/3065 ,  H01L21/3083 ,  H01L29/1054 ,  H01L29/165 ,  H01L29/267 ,  H01L29/66636 ,  H01L29/7848

Abstract: A method for manufacturing a transistor device comprising a channel layer is disclosed. In one example, the method includes providing a substrate, epitaxially growing a strained layer on the substrate (defect free), epitaxially growing the channel layer on the epitaxially grown strained layer, and providing a gate structure on the channel layer. In this example, the method also includes selectively etching into the channel layer and at least partially in the epitaxially grown strained layer, thereby using the gate structure as a mask, and thereby creating a protrusion extending from the substrate. The protrusion may comprise a portion of the channel layer and at least an upper portion of the epitaxially grown strained layer, and may allow for elastic relaxation in the portions.

Abstract translation: 公开了一种制造包括沟道层的晶体管器件的方法。 在一个实例中，该方法包括提供衬底，在衬底上外延生长应变层（无缺陷），外延生长外延生长的应变层上的沟道层，并在沟道层上提供栅极结构。 在该示例中，该方法还包括选择性地蚀刻到沟道层中并且至少部分地在外延生长的应变层中蚀刻，从而使用栅极结构作为掩模，从而产生从衬底延伸的突起。 突起可以包括沟道层的一部分和外延生长的应变层的至少上部，并且可以允许部分中的弹性松弛。