公开(公告)号：US12154794B2

公开(公告)日：2024-11-26

申请号：US17451454

申请日：2021-10-19

Applicant: IMEC vzw

Inventor： Shreya Kundu ,  Frederic Lazzarino

IPC: H01L21/465

Abstract: A method of etching an indium gallium zinc oxide (IGZO) structure is provided. In one aspect, the method includes exposing the IGZO structure to a reactant flow including a hydrocarbon-based reactant. Thereby, a reactant layer is formed on the IGZO structure. The method also includes exposing the reactant layer formed on the IGZO structure to an argon flow. Thereby, one or more reactant molecules are removed from the reactant layer. The one or more reactant molecules, which are removed from the reactant layer formed on the IGZO structure, are removed together with one or more IGZO molecules, thus leading to an etching of the IGZO structure.

公开(公告)号：US20220130681A1

公开(公告)日：2022-04-28

申请号：US17451454

申请日：2021-10-19

Applicant: IMEC vzw

Inventor： Shreya Kundu ,  Frederic Lazzarino

IPC: H01L21/465

Abstract: A method of etching an indium gallium zinc oxide (IGZO) structure is provided. In one aspect, the method includes exposing the IGZO structure to a reactant flow including a hydrocarbon-based reactant. Thereby, a reactant layer is formed on the IGZO structure. The method also includes exposing the reactant layer formed on the IGZO structure to an argon flow. Thereby, one or more reactant molecules are removed from the reactant layer. The one or more reactant molecules, which are removed from the reactant layer formed on the IGZO structure, are removed together with one or more IGZO molecules, thus leading to an etching of the IGZO structure.