公开(公告)号：US20130187135A1

公开(公告)日：2013-07-25

申请号：US13744207

申请日：2013-01-17

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Jing-Yi YAN ,  Shu-Tang YEH ,  Chih-Chieh HSU ,  Chen-Wei LIN ,  Kuang-Jung CHEN

IPC: H01L51/52

CPC classification number: H01L51/5228 ,  H01L27/3244

Abstract: A light emitting device includes a substrate, and a plurality of light emitting structures disposed thereon. Each of the light emitting structures includes an auxiliary electrode disposed on the substrate, a first insulating layer disposed on the substrate and covering the auxiliary electrode, an electrode disposed on the first insulating layer, a second insulating layer disposed on the first insulating layer and having a first opening exposing the electrode, an organic light emitting layer disposed in the first opening, a cathode disposed on the organic light emitting layer, at least a conductive structure penetrating through the first insulating layer and the second insulating layer, and a closed ring structure disposed on the second insulating layer and around the cathode, wherein a thickness of the closed ring structure is larger than that of the cathode.

Abstract translation: 发光器件包括衬底和设置在其上的多个发光结构。 每个发光结构包括设置在基板上的辅助电极，设置在基板上并覆盖辅助电极的第一绝缘层，设置在第一绝缘层上的电极，设置在第一绝缘层上的第二绝缘层， 暴露电极的第一开口，设置在第一开口中的有机发光层，设置在有机发光层上的阴极，至少穿过第一绝缘层和第二绝缘层的导电结构，以及闭环结构 设置在第二绝缘层上并围绕阴极，其中闭环结构的厚度大于阴极的厚度。

公开(公告)号：US20140231811A1

公开(公告)日：2014-08-21

申请号：US14184148

申请日：2014-02-19

Applicant: Industrial Technology Research Institute

Inventor： Jing-Yi YAN ,  Chih-Chieh HSU ,  Liang-Hsiang CHEN ,  Chen-Wei LIN

IPC: H01L29/786 ,  H01L29/66 ,  H01L27/15 ,  H01L49/02

CPC classification number: H01L27/1248 ,  H01L27/1218 ,  H01L27/326 ,  H01L27/3262 ,  H01L29/4908 ,  H01L29/78606 ,  H01L29/78609

Abstract: A semiconductor device structure is provided. The semiconductor device structure may include a substrate, a semiconductor layer, a first conductive layer, a second conductive layer, a first dielectric layer and a second dielectric layer. The first dielectric layer is disposed on the substrate. The second dielectric layer is disposed on the first dielectric layer. The semiconductor layer is adjacent to the first dielectric layer or the second dielectric layer. The semiconductor layer is disposed on the first dielectric layer or the second dielectric layer. The first conductive layer is adjacent to the first dielectric layer or the second dielectric layer. The second conductive layer is disposed on the first dielectric layer or the second dielectric layer. The effective Young's modulus of the second dielectric layer may be smaller than the Young's modulus of the first dielectric layer.

Abstract translation: 提供半导体器件结构。 半导体器件结构可以包括衬底，半导体层，第一导电层，第二导电层，第一介电层和第二介电层。 第一介电层设置在基板上。 第二电介质层设置在第一电介质层上。 半导体层与第一介电层或第二介电层相邻。 半导体层设置在第一电介质层或第二电介质层上。 第一导电层与第一介电层或第二介电层相邻。 第二导电层设置在第一介电层或第二介电层上。 第二电介质层的有效杨氏模量可以小于第一介电层的杨氏模量。