公开(公告)号：US20180083054A1

公开(公告)日：2018-03-22

申请号：US15813088

申请日：2017-11-14

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Pei-Wen YEN ,  Yan-Rung LIN ,  Kai-Ping CHUANG ,  Sheng-Min YU

IPC: H01L27/146

CPC classification number: H01L27/14609 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14683

Abstract: An image sensor and a manufacturing method thereof are provided. The image sensor includes a pixel sensing circuit, a pixel electrode, and an opto-electrical conversion layer. The pixel sensing circuit is corresponding to a plurality of pixel regions. The pixel electrode is disposed on the pixel sensing circuit. The pixel electrode includes a first electrode and a second electrode and is electrically connected to the pixel sensing circuit. The first electrode and the second electrode are coplanar, and have different polarities. The opto-electrical conversion layer is disposed on the pixel sensing circuit. The opto-electrical conversion layer includes a plurality of opto-electrical conversion portions, each of the opto-electrical conversion portions is corresponding to each of the pixel regions, and the opto-electrical conversion portions are separated from each other by a pixel isolation trench.

公开(公告)号：US20180301485A1

公开(公告)日：2018-10-18

申请号：US16015307

申请日：2018-06-22

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Pei-Wen YEN ,  Yan-Rung LIN ,  Kai-Ping CHUANG ,  Sheng-Min YU

IPC: H01L27/146

CPC classification number: H01L27/14609 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14683

Abstract: An image sensor and a manufacturing method thereof are provided. The image sensor includes a pixel sensing circuit, a pixel electrode, and an opto-electrical conversion layer. The pixel sensing circuit is corresponding to a plurality of pixel regions. The pixel electrode is disposed on the pixel sensing circuit. The pixel electrode includes a first electrode and a second electrode and is electrically connected to the pixel sensing circuit. The first electrode and the second electrode are coplanar, and have different polarities. The opto-electrical conversion layer is disposed on the pixel sensing circuit. The opto-electrical conversion layer includes a plurality of opto-electrical conversion portions, each of the opto-electrical conversion portions is corresponding to each of the pixel regions, and the opto-electrical conversion portions are separated from each other by a pixel isolation trench.

公开(公告)号：US20190074326A1

公开(公告)日：2019-03-07

申请号：US15850809

申请日：2017-12-21

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Sheng-Min YU ,  Wen-Ching SUN ,  Pei-Wen YEN ,  Yan-Rung LIN

IPC: H01L27/30 ,  H01L51/00

CPC classification number: H01L27/307 ,  H01L51/0015 ,  H01L51/0026 ,  H01L51/4206

Abstract: An image sensor and a manufacturing method thereof are provided. The image sensor includes a substrate, a patterned electrode layer, a pixel isolation structure and a patterned photo-electric conversion layer. The patterned electrode layer is disposed on the substrate and includes a plurality of electrode blocks separated from one another. The pixel isolation structure is disposed on the substrate and includes a metal halide. The patterned photo-electric conversion layer is disposed on the electrode blocks to form a plurality of photo-electric conversion blocks corresponding to the electrode blocks. The photo-electric conversion blocks include a perovskite material. The photo-electric conversion blocks are separated from one another by the pixel isolation structure.

公开(公告)号：US20170186788A1

公开(公告)日：2017-06-29

申请号：US15394712

申请日：2016-12-29

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Pei-Wen YEN ,  Yan-Rung LIN ,  Kai-Ping CHUANG ,  Sheng-Min YU

IPC: H01L27/146

CPC classification number: H01L27/14609 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14683

Abstract: An image sensor and a manufacturing method thereof are provided. The image sensor includes a pixel sensing circuit, a pixel electrode, and an opto-electrical conversion layer. The pixel sensing circuit is corresponding to a plurality of pixel regions. The pixel electrode is disposed on the pixel sensing circuit. The pixel electrode includes a first electrode and a second electrode and is electrically connected to the pixel sensing circuit. The first electrode and the second electrode are coplanar, and have different polarities. The opto-electrical conversion layer is disposed on the pixel sensing circuit. The opto-electrical conversion layer includes a plurality of opto-electrical conversion portions, each of the opto-electrical conversion portions is corresponding to each of the pixel regions, and the opto-electrical conversion portions are separated from each other by a pixel isolation trench.