公开(公告)号：US20130323905A1

公开(公告)日：2013-12-05

申请号：US13895132

申请日：2013-05-15

Applicant: INFINEON TECHNOLOGIES AG

Inventor： Markus ZUNDEL ,  Erwin BACHER ,  Andreas BEHRENDT ,  Joerg ORTNER ,  Walter RIEGER ,  Rudolf ZELSACHER

IPC: H01L21/762

CPC classification number: H01L21/76224 ,  H01L29/0657 ,  H01L29/0696 ,  H01L29/407 ,  H01L29/7803 ,  H01L29/7804 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/861

Abstract: A semiconductor component comprises a semiconductor body with at least one protective trench in the semiconductor body. An insulation layer is situated at least at the bottom of the protective trench. An electrically conductive layer having a thickness D is formed on the insulation layer in the protective trench, wherein the electrically conductive layer only partly fills the protective trench.

Abstract translation: 半导体部件包括在半导体本体中具有至少一个保护沟槽的半导体本体。 绝缘层至少位于保护沟槽的底部。 在保护沟槽中的绝缘层上形成具有厚度D的导电层，其中导电层仅部分地填充保护沟槽。