公开(公告)号：US20160284648A1

公开(公告)日：2016-09-29

申请号：US15071375

申请日：2016-03-16

Applicant: Infineon Technologies AG

Inventor： Markus ZUNDEL ,  Manfred SCHNEEGANS

IPC: H01L23/00 ,  C22C19/03 ,  H01L23/498 ,  H01L23/528 ,  H01L23/532

CPC classification number: H01L23/562 ,  C22C19/03 ,  H01L24/32 ,  H01L2224/32225 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/0132 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/3511

Abstract: In various embodiments, a die is provided. The die may include a die body, and at least one of a front side metallization structure on a front side of the die body and a back side metallization structure on a back side of the die body such that the die is plane or includes a positive radius of curvature at a die attach process temperature range.

Abstract translation: 在各种实施例中，提供了一个模具。 模具可以包括模具主体，以及在模具主体的前侧上的前侧金属化结构中的至少一个和在模具主体的后侧上的后侧金属化结构，使得模具是平面的或包括正的 芯片的弯曲半径附近工艺温度范围。

公开(公告)号：US20130323905A1

公开(公告)日：2013-12-05

申请号：US13895132

申请日：2013-05-15

Applicant: INFINEON TECHNOLOGIES AG

Inventor： Markus ZUNDEL ,  Erwin BACHER ,  Andreas BEHRENDT ,  Joerg ORTNER ,  Walter RIEGER ,  Rudolf ZELSACHER

IPC: H01L21/762

CPC classification number: H01L21/76224 ,  H01L29/0657 ,  H01L29/0696 ,  H01L29/407 ,  H01L29/7803 ,  H01L29/7804 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/861

Abstract: A semiconductor component comprises a semiconductor body with at least one protective trench in the semiconductor body. An insulation layer is situated at least at the bottom of the protective trench. An electrically conductive layer having a thickness D is formed on the insulation layer in the protective trench, wherein the electrically conductive layer only partly fills the protective trench.

Abstract translation: 半导体部件包括在半导体本体中具有至少一个保护沟槽的半导体本体。 绝缘层至少位于保护沟槽的底部。 在保护沟槽中的绝缘层上形成具有厚度D的导电层，其中导电层仅部分地填充保护沟槽。

公开(公告)号：US20170170286A1

公开(公告)日：2017-06-15

申请号：US15373128

申请日：2016-12-08

Applicant: Infineon Technologies AG

Inventor： Markus ZUNDEL ,  Thomas OSTERMANN ,  Michael SORGER

IPC: H01L29/417 ,  H01L29/10 ,  H01L29/40 ,  H01L29/423 ,  H01L29/06

CPC classification number: H01L29/41775 ,  H01L29/0696 ,  H01L29/1083 ,  H01L29/401 ,  H01L29/407 ,  H01L29/41741 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/4238 ,  H01L29/7397 ,  H01L29/7813 ,  H01L29/7827

Abstract: A semiconductor device includes a plurality of trenches extending into a semiconductor substrate. Each trench comprises a plurality of enlarged width regions distributed along the trench. At least one electrically conductive trench structure is located in each trench. The semiconductor device comprises an electrically insulating layer arranged between the semiconductor substrate and an electrode structure. The semiconductor device comprises a vertical electrically conductive structure extending through the electrically insulating layer. The vertical electrically conductive structure forms an electrically connection between the electrode structure and an electrically conductive trench structure located in a first trench of at a first enlarged width region. The electrically insulating layer is arranged between a second enlarged width region of the plurality of enlarged width regions of the first trench and an electrode structure above the second enlarged width region without any vertical electrical connections through the electrically insulating layer at the second enlarged width region.