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公开(公告)号：US20160209590A1
公开(公告)日：2016-07-21
申请号：US15080476
申请日：2016-03-24
Applicant: INPHI CORPORATION
Inventor： Masaki KATO , Radha NAGARAJAN
CPC classification number: G02B6/126 , G02B6/105 , G02B6/12 , G02B6/12009 , G02B6/12014 , G02B6/12023 , G02B6/122 , G02B6/124 , G02B6/2773 , G02B6/2861 , G02B6/29325 , G02B6/2938 , G02B2006/12061 , G02B2006/12107 , G02B2006/12123 , G02B2006/1215
Abstract: A silicon photonics device and system therefor. The silicon photonics device can include a 300 nm SOI (silicon-on-insulator with 300 nm top Si) overlying a substrate member. A waveguide structure can be configured from a portion of the SOI layer and disposed overlying the substrate member. This waveguide structure can include an AWG (Arrayed Waveguide Gratings) structure with 300 nm×300 nm symmetric grating waveguides or an Echelle grating structure characterized by a top silicon thickness of 300 nm. The waveguide structure can also include an index compensator material configured to provide at least two material index ratings in the waveguide structure.
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公开(公告)号：US20170038531A1
公开(公告)日：2017-02-09
申请号：US15299731
申请日：2016-10-21
Applicant: INPHI CORPORATION
Inventor： Masaki KATO , Radha NAGARAJAN
CPC classification number: G02B6/126 , G02B6/105 , G02B6/12 , G02B6/12009 , G02B6/12014 , G02B6/12023 , G02B6/122 , G02B6/124 , G02B6/2773 , G02B6/2861 , G02B6/29325 , G02B6/2938 , G02B2006/12061 , G02B2006/12107 , G02B2006/12123 , G02B2006/1215
Abstract: A silicon photonics device and system therefor. The silicon photonics device can include a 300 nm SOI (silicon-on-insulator with 300 nm top Si) overlying a substrate member. A waveguide structure can be configured from a portion of the SOI layer and disposed overlying the substrate member. This waveguide structure can include an AWG (Arrayed Waveguide Gratings) structure with 300 nm×300 nm symmetric grating waveguides or an Echelle grating structure characterized by a top silicon thickness of 300 nm. The waveguide structure can also include an index compensator material configured to provide at least two material index ratings in the waveguide structure.
Abstract translation: 一种硅光子器件及其系统。 硅光子器件可以包括覆盖在衬底构件上的300nm SOI（具有300nm顶部Si的绝缘体上硅）。 波导结构可以由SOI层的一部分配置并且设置在衬底构件上。 该波导结构可以包括具有300nm×300nm对称光栅波导的AWG（阵列波导光栅）结构或以300nm的顶部硅厚度为特征的Echelle光栅结构。 波导结构还可以包括配置为在波导结构中提供至少两个材料折射率等级的折射率补偿器材料。
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公开(公告)号：US20150309252A1
公开(公告)日：2015-10-29
申请号：US14262621
申请日：2014-04-25
Applicant: INPHI CORPORATION
Inventor： Masaki KATO , Radha NAGARAJAN
CPC classification number: G02B6/126 , G02B6/105 , G02B6/12 , G02B6/12009 , G02B6/12014 , G02B6/12023 , G02B6/122 , G02B6/124 , G02B6/2773 , G02B6/2861 , G02B6/29325 , G02B6/2938 , G02B2006/12061 , G02B2006/12107 , G02B2006/12123 , G02B2006/1215
Abstract: A silicon photonics device and system therefor. The silicon photonics device can include a 300 nm SOI (silicon-on-insulator with 300 nm top Si) overlying a substrate member. A waveguide structure can be configured from a portion of the SOI layer and disposed overlying the substrate member. This waveguide structure can include an AWG (Arrayed Waveguide Gratings) structure with 300 nm×300 nm symmetric grating waveguides or an Echelle grating structure characterized by a top silicon thickness of 300 nm. The waveguide structure can also include an index compensator material configured to provide at least two material index ratings in the waveguide structure.
Abstract translation: 一种硅光子器件及其系统。 硅光子器件可以包括覆盖在衬底构件上的300nm SOI（具有300nm顶部Si的绝缘体上硅）。 波导结构可以由SOI层的一部分配置并且设置在衬底构件上。 该波导结构可以包括具有300nm×300nm对称光栅波导的AWG（阵列波导光栅）结构或以300nm的顶部硅厚度为特征的Echelle光栅结构。 波导结构还可以包括配置为在波导结构中提供至少两个材料折射率等级的折射率补偿器材料。
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