PHOTONIC INTEGRATED CIRCUIT STRUCTURE WITH POLARIZATION DEVICE FOR HIGH POWER APPLICATIONS

    公开(公告)号:US20240241313A1

    公开(公告)日:2024-07-18

    申请号:US18619985

    申请日:2024-03-28

    Inventor: Yusheng Bian

    CPC classification number: G02B6/1228 G02B6/126

    Abstract: Disclosed is a structure including a polarization device with first and second waveguides. The first waveguide includes a core (e.g., a silicon nitride (SiN) core) suitable for high-power applications. The second waveguide includes: a primary core (e.g., another SiN core), which is positioned laterally adjacent to the core of the first waveguide and suitable for high-power applications, and secondary core(s) stacked vertically with the primary core to steer the optical mode and ensure that mode matching occurs between adjacent first and second coupling sections of the first and second waveguides, respectively, in order to achieve high-power splitter and/or combiner functions. Optionally, the primary and secondary cores of the second waveguide can be tapered at least within the second coupling section to increase the likelihood of mode matching.

    INTEGRATED COHERENT OPTICAL TRANSCEIVER
    5.
    发明公开

    公开(公告)号:US20240089002A1

    公开(公告)日:2024-03-14

    申请号:US18502449

    申请日:2023-11-06

    Abstract: An integrated circuit includes a silicon photonics substrate having a silicon-based material, silicon photonics components formed in the silicon photonics substrate to receive and transmit optical signals, and electrical connections; a transimpedance amplifier chip arranged on the silicon photonics substrate, having a silicon-germanium material that is different than the silicon-based material, connected via the electrical connections to at least one of the silicon photonics components configured to receive an optical signal, and configured to process a received optical signal and output a processed signal to a digital signal processor; and a driver chip arranged on the silicon photonics substrate, having CMOS material that is different than the silicon-germanium material and the silicon-based material, connected via the electrical connections to drive at least one of the silicon photonics components configured to generate an optical signal for transmission.

    Electronically controlled depolarizer based on crossed-slit waveguide

    公开(公告)号:US11927800B2

    公开(公告)日:2024-03-12

    申请号:US17616696

    申请日:2020-04-22

    CPC classification number: G02B6/126 G02F1/035

    Abstract: An electrically controlled depolarizer based on a crossed-slit waveguide (3) includes a horizontal-slit waveguide (1), a 45-degree polarization rotation waveguide (2), a pair of modulation electrodes (4) and the crossed-slit waveguide (3). Broad-spectrum TM (transverse magnetic) polarized light is inputted from one end of the horizontal-slit waveguide (1), and then a part of the broad-spectrum TM polarized light is converted into broad-spectrum TE (transverse electric) polarized light through the 45-degree polarization rotation waveguide (2), and then the broad-spectrum TE polarized light and the remaining broad-spectrum TM polarized light enter an input end of the crossed-slit waveguide (3); the board-spectrum TE polarized light is transmitted in a vertical slit of the crossed-slit waveguide (3); the remaining broad-spectrum TM polarized light is transmitted in a horizontal slit of the crossed-slit waveguide (3); and the broad-spectrum TE polarized light and the remaining broad-spectrum TM polarized light form depolarized light at an output end of the crossed-slit waveguide (3). The pair of modulation electrodes (4) realize the precise adjustment of the rotation angle of the 45-degree polarization rotation waveguide (2) by electronic control, such that the TE polarized light and the TM polarized light at the output end of the crossed-slit waveguide (3) have equal energy, thereby overcoming uneven light splitting caused by loss of the polarization rotation waveguide and TE and TM waveguide transmission loss.

    MICROMECHANICALLY-TUNABLE POLARIZATION ROTATOR FOR PHOTONIC INTEGRATED CIRCUITS

    公开(公告)号:US20240036259A1

    公开(公告)日:2024-02-01

    申请号:US18221962

    申请日:2023-07-14

    CPC classification number: G02B6/2766 G02B6/3584 G02B6/126

    Abstract: An apparatus includes a polarization rotator or a polarization splitter. The polarization rotator and the polarization splitter each includes a first optical waveguide. The polarization rotator further includes a movable symmetry-breaking micro-electro-mechanical systems (“MEMS”) dielectric perturber separated from the first optical waveguide by a gap. The first optical waveguide and the MEMS dielectric perturber define a gap therebetween. The polarization rotator also includes a MEMS actuator moving the MEMS dielectric perturber so as to control the gap, thereby controlling polarization rotation within the first optical waveguide. The polarization splitter includes a second optical waveguide separated from the first optical waveguide by a gap. The polarization splitter also includes a MEMS actuator moving the first optical waveguide and/or the second optical waveguide so as to control the gap, thereby controlling polarization splitting between the optical waveguides.

    OPTICAL ABSORBER AND OPTICAL ABSORPTION CHIP INTEGRATED WITH DIELECTRIC OPTICAL WAVEGUIDE

    公开(公告)号:US20240027686A1

    公开(公告)日:2024-01-25

    申请号:US18266321

    申请日:2022-02-25

    Inventor: Xingyu ZHANG

    CPC classification number: G02B6/126 G02B6/1347 G02B5/003

    Abstract: The invention provides an optical absorber and an optical absorption chip integrated with a dielectric optical waveguide. The optical absorber comprises a waveguide cladding, a dielectric optical waveguide core and an absorption material layer, wherein the waveguide cladding surrounds the dielectric optical waveguide core and the absorption material layer, the dielectric optical waveguide core comprises a first end and a second end, a radial dimension of the dielectric optical waveguide core gradually decreases from the first end to the second end, a material of the absorption material layer can be metal or silicon, and the absorption material layer can be located on an upper layer of the dielectric optical waveguide core, or on a side of the dielectric optical waveguide core, or on a lower layer of the dielectric optical waveguide core, so that the optical absorber can reduce back-reflection and allow light to be completely absorbed.

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