公开(公告)号：US20210231866A1

公开(公告)日：2021-07-29

申请号：US16776362

申请日：2020-01-29

Applicant: INPHI CORPORATION

Inventor： Xiaoguang TU ,  Masaki KATO ,  Yu LI

IPC: G02B6/12 ,  G02B6/14 ,  G02B6/13

Abstract: A silicon photonics integration circuit includes a silicon substrate member; a RX sub-circuit formed in the silicon substrate member including multiple RX-input ports each having a mode size converter configured to receive an incoming light signal into one of multiple waveguides and multiple RX photo detectors coupled respectively to the multiple waveguides; and a TX sub-circuit formed in the silicon substrate member including one or more TX-input ports each having a mode size converter coupled to a first TX photo detector into one input waveguide, one or more 1×2 directional couplers each coupled between the input waveguide and two mod-input waveguides, multiple modulators coupled between respective multiple mod-input waveguides and multiple mod-output waveguides each being coupled to a second TX photo detector into one of multiple output waveguides, and multiple TX-output ports each having a mode size converter coupled to respective one of the multiple output waveguides.

公开(公告)号：US20220069153A1

公开(公告)日：2022-03-03

申请号：US17011373

申请日：2020-09-03

Applicant: INPHI CORPORATION

Inventor： Yu LI ,  Masaki KATO

IPC: H01L31/107 ,  H01L31/0232

Abstract: A germanium-on-silicon avalanche photodetector includes a silicon device layer of a silicon-on-insulator substrate having a central region characterized by modest-heavy n+ doping state between a first electrode region and a second electrode region in heavy n++ doping state; a first sub-layer of the central region modified to nearly neutral doping state and located from a first depth down to a second depth below a top surface of the silicon device layer; a second sub-layer of the central region modified to modest p doping state embedded from the top surface down to the first depth to interface with the first sub-layer; a layer of germanium with a bottom side attached to the top surface of the second sub-layer; and a third sub-layer embedded into a top side of the layer of germanium, characterized by heavy p++ doping state.