MEMORY COMPRISING A CIRCUIT FOR DETECTING A GLITCH ON A LINE OF THE MEMORY
    1.
    发明申请
    MEMORY COMPRISING A CIRCUIT FOR DETECTING A GLITCH ON A LINE OF THE MEMORY 有权
    包含用于检测记忆线上的玻璃杯的电路的存储器

    公开(公告)号:US20160012919A1

    公开(公告)日:2016-01-14

    申请号:US14769648

    申请日:2014-02-18

    申请人: INSIDE SECURE

    IPC分类号: G11C29/50 G11C7/00

    摘要: A memory including at least one line to which memory cells are coupled. A control circuit is configured to emit an end-of-operation signal at the end of the execution of an operation on at least one memory cell, and a glitch detection circuit coupled to the memory line is configured to supply a glitch detection signal when a falling edge of the amplitude of a voltage signal appears on the memory line in the absence of the end-of-operation signal.

    摘要翻译: 存储器,其包括与存储器单元耦合到的至少一行。 控制电路被配置为在对至少一个存储单元执行操作结束时发射操作结束信号,并且耦合到存储器线的毛刺检测电路被配置为当 在没有操作结束信号的情况下,电压信号幅度的下降沿出现在存储线上。