公开(公告)号：US20210165027A1

公开(公告)日：2021-06-03

申请号：US16065582

申请日：2015-12-25

申请人： INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

发明人： Guangwei XU ,  Zhiheng HAN ,  Wei WANG ,  Congyan LU ,  Lingfei WANG ,  Ling LI ,  Ming LIU

IPC分类号： G01R27/20 ,  G01R27/08

摘要： A method for obtaining a contact resistance of a planar device includes: obtaining a contact resistance of a planar device by using a potential measurement method, in the measurement of the surface potential distribution, the planar device is in a state of current flowing, a certain voltage drop is formed at a junction area of the device; extracting the voltage drop measured through the Kelvin microscope by using a linear fitting method; and dividing the measured voltage drop by the current flowing through the device, thereby accurately calculating the magnitude of the contact resistance at the junction area of the planar device. With the present invention, the contact resistance of the planar device can be precisely measured, which is suitable for the contact resistance measurement experiments of devices such as thin film transistors and diodes. The invention has the advantages of reasonable theory, accurate result, simple and easy operation, and is favorable for optimizing the device performance and establishing a complete electrical model of the device.