公开(公告)号：US10062775B2

公开(公告)日：2018-08-28

申请号：US15368098

申请日：2016-12-02

申请人： INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

发明人： Sen Huang ,  Xinyu Liu ,  Xinhua Wang ,  Ke Wei ,  Qilong Bao ,  Wenwu Wang ,  Chao Zhao

IPC分类号： H01L21/00 ,  H01L29/00 ,  H01L29/778 ,  H01L29/66 ,  H01L29/205 ,  H01L29/20 ,  H01L29/15 ,  H01L21/306

CPC分类号： H01L29/7786 ,  H01L21/30621 ,  H01L29/1066 ,  H01L29/155 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/432 ,  H01L29/66462

摘要： A GaN-based power electronic device and a method for manufacturing the same is provided. The GaN-based power electronic device comprising a substrate and an epitaxial layer over the substrate. The epitaxial layer comprises a GaN-based heterostructure layer, a superlattice structure layer and a P-type cap layer. The superlattice structure layer is provided over the heterostructure layer, and the P-type cap layer is provided over the superlattice structure layer. By using this electronic device, gate voltage swing and safe gate voltage range of the GaN-based power electronic device manufactured on the basis of the P-type cap layer technique may be further extended, and dynamic characteristics of the device may be improved. Therefore, application process for the GaN-based power electronic device that is based on the P-type cap layer technique will be promoted.