RANDOM NUMBER GENERATION WITH UNSTABLE BIT STATES OF NON-VOLATILE MEMORY

    公开(公告)号:US20180287793A1

    公开(公告)日:2018-10-04

    申请号:US15476739

    申请日:2017-03-31

    Abstract: In one embodiment, an unpredictable nature of the storage properties in what is otherwise referred to as the “lockout period” following the programming of a non-volatile bitcell in a bitcell programming interval, is advantageously utilized in a random number generation mode to read random numbers from the memory. Accordingly, instead of locking out read operations in a lockout interval, a read operation may be performed in that or a similarly placed interval to read a bit state of the bitcell, which bit state is random in nature. The instability of the storage property varies from bitcell to bitcell and therefore may be used to generate a set of random bits from a block of bitcells. Other aspects are described herein.

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