Patent search ap:("INTEL CORPORATION") AND inv:"James CLARKE" Page 1

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发明申请
SEMICONDUCTOR CHIP MANUFACTURING PROCESS FOR INTEGRATING LOGIC CIRCUITRY, EMBEDDED DRAM AND EMBEDDED NON-VOLATILE FERROELECTRIC RANDOM ACCESS MEMORY (FERAM) ON A SAME SEMICONDUCTOR DIE 审中-公开

公开(公告)号：US20190279697A1

公开(公告)日：2019-09-12

申请号：US16319239

申请日：2016-09-30

Applicant: INTEL CORPORATION

Inventor： Ilya KARPOV , Yih WANG , Fatih HAMZAOGLU , James CLARKE

IPC: G11C11/00 , H01L27/108 , H01L27/11514 , G11C11/22 , G11C11/407

Abstract: An apparatus is described. The apparatus includes a semiconductor chip that includes logic circuitry, embedded dynamic random access memory (DRAM) cells and embedded ferroelectric random access memory (FeRAM) cells.

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