公开(公告)号：US20200066645A1

公开(公告)日：2020-02-27

申请号：US16324087

申请日：2016-09-30

Applicant: INTEL CORPORATION

Inventor： Jason A. FARMER ,  Jeffrey S. LEIB ,  Michael L. MCSWINEY ,  Harsono S. SIMKA ,  Daniel B. BERGSTROM

IPC: H01L23/532 ,  H01L21/285 ,  H01L21/768 ,  H01L23/522

Abstract: Embodiments of the invention include a microelectronic device that includes a substrate having a layer of dielectric material that includes a feature with a depression, a Tungsten containing barrier liner layer formed in the depression of the feature, and a Cobalt conductive layer deposited on the Tungsten containing barrier liner layer in the depression of the feature. The Tungsten containing barrier liner layer provides adhesion for the Cobalt conductive layer.