公开(公告)号：US11646266B2

公开(公告)日：2023-05-09

申请号：US16535539

申请日：2019-08-08

Applicant: INTEL CORPORATION

Inventor： Kevin Lai Lin ,  Miriam Ruth Reshotko ,  Nafees Aminul Kabir

IPC: H01L23/528 ,  H01L23/532 ,  H01L23/522

CPC classification number: H01L23/5283 ,  H01L23/5226 ,  H01L23/53295

Abstract: Interconnect structures are disclosed. An example includes conductive traces over a first dielectric layer, dielectric helmet structures over top surfaces of the conductive traces, and a second dielectric layer over the helmet structures. Spaces between adjacent ones of conductive traces are devoid of material. A bottom surface of the second dielectric layer is between top surfaces of the dielectric structures and bottom surfaces of the helmet structures, or co-planar with the top surface of the helmet structures, but the airgap extends above tops of the conductive traces. Another example includes a dielectric adjacent to upper sections but not lower sections of conductive traces, so as to provide airgaps between adjacent lower sections. Alternatively, a first dielectric material is adjacent the upper sections and a second compositionally different dielectric material is adjacent the lower sections. In either case, the sidewalls of the upper sections of the interconnect features may include scalloping.

公开(公告)号：US20210043565A1

公开(公告)日：2021-02-11

申请号：US16535539

申请日：2019-08-08

Applicant: INTEL CORPORATION

Inventor： Kevin Lai Lin ,  Miriam Ruth Reshotko ,  Nafees Aminul Kabir

IPC: H01L23/528 ,  H01L23/532 ,  H01L21/768 ,  H01L23/522 ,  H01L21/311

Abstract: Interconnect structures are disclosed. An example includes conductive traces over a first dielectric layer, dielectric helmet structures over top surfaces of the conductive traces, and a second dielectric layer over the helmet structures. Spaces between adjacent ones of conductive traces are devoid of material. A bottom surface of the second dielectric layer is between top surfaces of the dielectric structures and bottom surfaces of the helmet structures, or co-planar with the top surface of the helmet structures, but the airgap extends above tops of the conductive traces. Another example includes a dielectric adjacent to upper sections but not lower sections of conductive traces, so as to provide airgaps between adjacent lower sections. Alternatively, a first dielectric material is adjacent the upper sections and a second compositionally different dielectric material is adjacent the lower sections. In either case, the sidewalls of the upper sections of the interconnect features may include scalloping.