公开(公告)号：US20150179479A1

公开(公告)日：2015-06-25

申请号：US14638328

申请日：2015-03-04

Applicant: INTEL CORPORATION

Inventor： Manish Dubey ,  Rajendra C. Dias ,  Yonghao Xiu ,  Arjun Krishnan ,  Yiqun Bai ,  Purushothan Kaushik Muthur Srinath

IPC: H01L21/56

CPC classification number: H01L21/563 ,  H01L23/00 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Embodiments of the present description include methods for attaching a microelectronic device to a microelectronic substrate with interconnection structures after disposing of an underfill material on the microelectronic device, wherein filler particless within the underfill material may be repelled away from the interconnection structures prior to connecting the microelectronic device to the microelectronic structure. These methods may include inducing a charge on the interconnection structures and may include placing the interconnection structures between opposing plates and producing a bias between the opposing plates after depositing the underfill material on the interconnection structures.

Abstract translation: 本说明书的实施例包括在微电子器件上处理底部填充材料之后将微电子器件附着到具有互连结构的微电子衬底的方法，其中，在将微电子器件连接到微电子器件之前，底部填充材料内的填料颗粒可能被排除离开互连结构 器件到微电子结构。 这些方法可以包括在互连结构上引入电荷，并且可以包括将互连结构放置在相对的板之间，并且在将底部填充材料沉积在互连结构上之后在相对的板之间产生偏压。