公开(公告)号：US20200185490A1

公开(公告)日：2020-06-11

申请号：US16617548

申请日：2017-06-30

申请人： INTEL IP CORPORATION

发明人： Georg Seidemann ,  Bernd WAIDHAS ,  Thomas WAGNER ,  Andreas WOLTER ,  Andreas AUGUSTIN

IPC分类号： H01L49/02 ,  H01L23/64 ,  H01L23/00 ,  H01L21/02 ,  H01L21/56 ,  H01F17/04

摘要： The present disclosure is directed to systems and methods for fabricating a semiconductor inductor that includes a coil deposited on a stop layer that is deposited on a sacrificial substrate. The semiconductor inductor may be fabricated on a silicon wafer and singulated. The sacrificial substrate beneficially provides structural support for the singulated semiconductor inductor. The singulated semiconductor inductor advantageously requires minimal active die surface area. The removal of the sacrificial substrate after coupling to the active die beneficially reduces the overall thickness (or height) of the semiconductor package, providing a decided advantage in low profile, portable, electronic devices.