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1.发明申请公开(公告)号：US20250040232A1
公开(公告)日：2025-01-30
申请号：US18226189
申请日：2023-07-25
Applicant: International Business Machines Corporation
Inventor： Konstantinos Tsoukalas , Patrick Harvey-Collard , Andreas Fuhrer Janett , Felix Julian Schupp , Matthias Mergenthaler
IPC: H01L21/8234 , H01L27/10 , H01L27/12
Abstract: One embodiment of the invention provides a method for fabricating a self-aligned gate structure comprising forming at least one first trench having a first width and at least one second trench having a second width in a gate structure comprising a first metallic gate layer. The first width is smaller than the second width. The method comprises depositing at least one conformal dielectric layer on the first metallic gate layer. The dielectric layer completely fills the first trench and partially fills the second trench, such that a portion of the second trench is unfilled. The method comprises depositing a conformal second metallic gate layer on the dielectric layer. The second metallic gate layer fills the unfilled portion of the second trench. The method comprises removing portions of the second metallic gate layer to expose the dielectric layer. Remaining portions of the second metallic gate layer include self-aligned metallic gate electrodes.
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公开(公告)号：US20240135223A1
公开(公告)日：2024-04-25
申请号：US18048430
申请日：2022-10-19
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
IPC: G06N10/40
CPC classification number: G06N10/40
Abstract: A qubit device or system having isolated bottom corner gates includes a semiconductor substrate and a semiconductor fin perpendicularly adjoining a top surface of the substrate. The qubit device also includes a first gate located at a first corner between a first side of the fin and the top surface of the substrate, and a second gate located at a second corner between a second, opposite side of the fin and the top surface of the substrate. The first and second gates are electrically isolated from each other and used to control a first quantum dot near the top of the fin. A third gate located at the first corner has a contact for accumulating a channel to facilitate charge transport to and from a second quantum dot located near the bottom of the fin accumulated using the first and second gates.
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公开(公告)号：US20220109095A1
公开(公告)日：2022-04-07
申请号：US17063907
申请日：2020-10-06
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Matthias Mergenthaler , Andreas Fuhrer Janett , Stephan Paredes , Peter Mueller
Abstract: A method of modifying a resonant frequency of a quantum device includes generating an ion beam having a beam energy and exposing a surface of the quantum device to the ion beam for an exposure time. The ion beam is incident onto the quantum device at an oblique angle that is less than 90 degrees as measured from the surface of the quantum device. The quantum device includes a Josephson junction, the ion beam exposing the quantum device proximate to the Josephson junction to modify a property of the Josephson junction, the property being associated with the resonant frequency of the quantum device.
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公开(公告)号：US20240232674A9
公开(公告)日：2024-07-11
申请号：US18048430
申请日：2022-10-20
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
IPC: G06N10/40
CPC classification number: G06N10/40
Abstract: A qubit device or system having isolated bottom corner gates includes a semiconductor substrate and a semiconductor fin perpendicularly adjoining a top surface of the substrate. The qubit device also includes a first gate located at a first corner between a first side of the fin and the top surface of the substrate, and a second gate located at a second corner between a second, opposite side of the fin and the top surface of the substrate. The first and second gates are electrically isolated from each other and used to control a first quantum dot near the top of the fin. A third gate located at the first corner has a contact for accumulating a channel to facilitate charge transport to and from a second quantum dot located near the bottom of the fin accumulated using the first and second gates.
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公开(公告)号：US11251355B2
公开(公告)日：2022-02-15
申请号：US16292643
申请日：2019-03-05
Applicant: International Business Machines Corporation
Inventor： Thilo Hermann Curt Stoeferle , Andreas Fuhrer Janett , Stefan Filipp
Abstract: A method of an embodiment includes forming a capacitor pad for a nonlinear resonator. In an embodiment, the method includes comparing a resonance frequency of the nonlinear resonator to a target frequency to determine whether the resonance frequency falls within a range of the target frequency. A device of an embodiment includes a first capacitor pad comprising a superconducting material, the first capacitor pad configured to couple to a first end of a logic circuit element. In an embodiment, the device includes a second capacitor pad comprising a second superconducting material, the capacitor pad configured to couple to a second end of the logic circuit element. In an embodiment, the second capacitor pad includes a first portion; a second portion; and a bridge configured to electrically connect the first portion and the second portion.
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Patent Agency Ranking
公开(公告)号：US11165429B2
公开(公告)日：2021-11-02
申请号：US16831241
申请日：2020-03-26
Applicant: International Business Machines Corporation
Inventor： Andreas Fuhrer Janett , Fabrizio Nichele , Markus Fabian Ritter , Heike Erika Riel
IPC: H03K19/195 , G06N10/00 , H03K17/92 , H01L39/22
Abstract: The invention is notably directed to a method of operating a superconducting channel. The method relies on a device including: a potentially superconducting material; a gate electrode; and an electrically insulating medium. A channel is defined by the potentially superconducting material. The gate electrode positioned adjacent to the channel, such that an end surface of the gate electrode faces a portion of the channel. The electrically insulating medium is arranged in such a manner that it electrically insulates the gate electrode from the channel. Rendering the channel superconducting by cooling down the device. Next, a voltage difference is applied between the gate electrode and the channel to inject electrons in the channel through the electrically insulating medium and thereby generate a gate current between the gate electrode and the channel. The electrons are injected with an average energy sufficient to modify a critical current IC of the channel.
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公开(公告)号：US11152707B1
公开(公告)日：2021-10-19
申请号：US16920387
申请日：2020-07-02
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Andreas Fuhrer Janett , Stephan Paredes , Thilo Hermann Curt Stoeferle , Stefan Filipp , Matthias Mergenthaler
Abstract: A device package includes a chip carrier having a cavity and one or more microwave waveguides configured to route signals. There is a chip including one or more pads and located within the cavity of the chip carrier. Each pad is aligned with a corresponding connector pad of a microwave waveguide of the one or more microwave waveguides of the chip carrier. At least one of the one or more pads is coupled to the connector pad of the corresponding microwave waveguide by way of an overlap capacitive coupling between the at least one pad and the aligned corresponding connector pad of the microwave waveguide.
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公开(公告)号：US11946964B2
公开(公告)日：2024-04-02
申请号：US17562391
申请日：2021-12-27
Applicant: International Business Machines Corporation
Inventor： Nicolò Crescini , Andreas Fuhrer Janett , Gian R. von Salis , Eoin Gerard Kelly
CPC classification number: G01R29/0892 , G06N10/40
Abstract: One or more systems, devices and/or methods of use provided herein relate to a device that can facilitate a process to measure a pair of spectral sidebands and suppress one of common mode phase or amplitude noise. A device can comprise an interferometer device that can detect an interference of two spectral sidebands. The interferometer device can comprise a signal circuit that can detect at least one of a phase or an amplitude of a signal resulting from the interference of the two spectral sidebands, an IQ modulator that can generate the two spectral sidebands using a portion of a local oscillator (LO) microwave signal and a pair of signals at a same intermediate frequency, and/or a mixer that can interfere the two spectral sidebands having been output or reflected from a device under test, including mixing the two spectral sidebands with another portion of the LO microwave signal.
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公开(公告)号：US20230204647A1
公开(公告)日：2023-06-29
申请号：US17562391
申请日：2021-12-27
Applicant: International Business Machines Corporation
Inventor： Nicolò Crescini , Andreas Fuhrer Janett , Gian R. von Salis , Eoin Gerard Kelly
CPC classification number: G01R29/0892 , G06N10/40
Abstract: One or more systems, devices and/or methods of use provided herein relate to a device that can facilitate a process to measure a pair of spectral sidebands and suppress one of common mode phase or amplitude noise. A device can comprise an interferometer device that can detect an interference of two spectral sidebands. The interferometer device can comprise a signal circuit that can detect at least one of a phase or an amplitude of a signal resulting from the interference of the two spectral sidebands, an IQ modulator that can generate the two spectral sidebands using a portion of a local oscillator (LO) microwave signal and a pair of signals at a same intermediate frequency, and/or a mixer that can interfere the two spectral sidebands having been output or reflected from a device under test, including mixing the two spectral sidebands with another portion of the LO microwave signal.
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公开(公告)号：US11641785B2
公开(公告)日：2023-05-02
申请号：US17063907
申请日：2020-10-06
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Matthias Mergenthaler , Andreas Fuhrer Janett , Stephan Paredes , Peter Mueller
Abstract: A method of modifying a resonant frequency of a quantum device includes generating an ion beam having a beam energy and exposing a surface of the quantum device to the ion beam for an exposure time. The ion beam is incident onto the quantum device at an oblique angle that is less than 90 degrees as measured from the surface of the quantum device. The quantum device includes a Josephson junction, the ion beam exposing the quantum device proximate to the Josephson junction to modify a property of the Josephson junction, the property being associated with the resonant frequency of the quantum device.
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