公开(公告)号：US20210020780A1

公开(公告)日：2021-01-21

申请号：US16513871

申请日：2019-07-17

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： JOHN ROZEN ,  TAKASHI ANDO ,  TEODOR KRASSIMIROV TODOROV ,  JIANSHI TANG

IPC: H01L29/786 ,  H01L29/24 ,  G06N3/063

Abstract: A neuromorphic device includes a metal-oxide channel layer that has a variable-resistance between a first terminal and a second terminal. The neuromorphic device further includes a metal-oxide charge transfer layer over the metal-oxide channel layer that causes the metal-oxide channel layer to vary in resistance based on charge exchange between the metal-oxide charge transfer layer and the metal-oxide channel layer in accordance with an applied input signal. The neuromorphic device further includes a third terminal that applies the signal to the metal-oxide charge transfer layer and the metal-oxide channel layer.