BOND ENHANCEMENT STRUCTURE IN MICROELECTRONICS FOR TRAPPING CONTAMINANTS DURING DIRECT-BONDING PROCESSES

    公开(公告)号:US20220246564A1

    公开(公告)日:2022-08-04

    申请号:US17681019

    申请日:2022-02-25

    IPC分类号: H01L23/00

    摘要: Structures and techniques provide bond enhancement in microelectronics by trapping contaminants and byproducts during bonding processes, and arresting cracks. Example bonding surfaces are provided with recesses, sinks, traps, or cavities to capture small particles and gaseous byproducts of bonding that would otherwise create detrimental voids between microscale surfaces being joined, and to arrest cracks. Such random voids would compromise bond integrity and electrical conductivity of interconnects being bonded. In example systems, a predesigned recess space or predesigned pattern of recesses placed in the bonding interface captures particles and gases, reducing the formation of random voids, thereby improving and protecting the bond as it forms. The recess space or pattern of recesses may be placed where particles collect on the bonding surface, through example methods of determining where mobilized particles move during bond wave propagation. A recess may be repeated in a stepped reticule pattern at the wafer level, for example, or placed by an aligner or alignment process.

    Bond enhancement structure in microelectronics for trapping contaminants during direct-bonding processes

    公开(公告)号:US11296044B2

    公开(公告)日:2022-04-05

    申请号:US16553535

    申请日:2019-08-28

    IPC分类号: H01L23/00

    摘要: Structures and techniques provide bond enhancement in microelectronics by trapping contaminants and byproducts during bonding processes, and arresting cracks. Example bonding surfaces are provided with recesses, sinks, traps, or cavities to capture small particles and gaseous byproducts of bonding that would otherwise create detrimental voids between microscale surfaces being joined, and to arrest cracks. Such random voids would compromise bond integrity and electrical conductivity of interconnects being bonded. In example systems, a predesigned recess space or predesigned pattern of recesses placed in the bonding interface captures particles and gases, reducing the formation of random voids, thereby improving and protecting the bond as it forms. The recess space or pattern of recesses may be placed where particles collect on the bonding surface, through example methods of determining where mobilized particles move during bond wave propagation. A recess may be repeated in a stepped reticule pattern at the wafer level, for example, or placed by an aligner or alignment process.

    Integrated optical waveguides, direct-bonded waveguide interface joints, optical routing and interconnects

    公开(公告)号:US11169326B2

    公开(公告)日:2021-11-09

    申请号:US16247262

    申请日:2019-01-14

    IPC分类号: G02B6/13 G02B6/12

    摘要: Integrated optical waveguides, direct-bonded waveguide interface joints, optical routing and interconnects are provided. An example optical interconnect joins first and second optical conduits. A first direct oxide bond at room temperature joins outer claddings of the two optical conduits and a second direct bond joins the inner light-transmitting cores of the two conduits at an annealing temperature. The two low-temperature bonds allow photonics to coexist in an integrated circuit or microelectronics package without conventional high-temperatures detrimental to microelectronics. Direct-bonded square, rectangular, polygonal, and noncircular optical interfaces provide better matching with rectangular waveguides and better performance. Direct oxide-bonding processes can be applied to create running waveguides, photonic wires, and optical routing in an integrated circuit package or in chip-to-chip optical communications without need for conventional optical couplers. An example wafer-level process fabricates running waveguides, optical routing, and direct-bonded optical interconnects for silicon photonics and optoelectronics packages when two wafers are joined.

    Interface structures and methods for forming same

    公开(公告)号:US10446487B2

    公开(公告)日:2019-10-15

    申请号:US15709309

    申请日:2017-09-19

    摘要: A stacked and electrically interconnected structure is disclosed. The stacked structure can include a first element comprising a first contact pad and a second element comprising a second contact pad. The first contact pad and the second contact pad can be electrically and mechanically connected to one another by an interface structure. The interface structure can comprise a passive equalization circuit that includes a resistive electrical pathway between the first contact pad and the second contact pad and a capacitive electrical pathway between the first contact pad and the second contact pad. The resistive electrical pathway and the capacitive electrical pathway form an equivalent parallel resistor-capacitor (RC) equalization circuit.

    CAVITY PACKAGES
    9.
    发明申请

    公开(公告)号:US20210134689A1

    公开(公告)日:2021-05-06

    申请号:US17146304

    申请日:2021-01-11

    IPC分类号: H01L23/10 H01L23/66 H01L23/04

    摘要: An integrated device package is disclosed. The integrated device package can include an integrated device die, an element, a cavity, and an electrical interconnect. The element can have an antenna structure. The element can be attached to a surface of the integrated device. The cavity can be disposed between the integrated device die and the antenna structure. The electrical interconnect can connect the integrated device die and the antenna structure.